分子印迹铜离子伏安传感器的研制与应用  

Preparation and application of the copper ion voltametric sensors based on molecularly imprinting technology

作　　者：徐丽娟[1] 李锦书[1] 卢小泉[1] 王志华[1] 

机构地区：[1]西北师范大学化学化工学院,甘肃省生物电化学与环境分析重点实验室,甘肃兰州730070

出　　处：《化学研究与应用》2013年第10期1351-1356,共6页Chemical Research and Application

基　　金：国家自然科学基金项目(20965007)资助;甘肃省高分子材料重点实验室项目资助

摘　　要：利用分子印迹技术，以铜离子为模板，邻苯二胺为功能单体，在碳纳米管修饰的玻碳电极表面原位聚合，制备了铜离子印迹电化学传感器。采用差示脉冲伏安法对铜离子在该印迹电极上的电化学行为进行了研究。铜离子在2．0x10^-3～1．0x10^10^-15mol·L-1浓度区间内与峰电流呈线性关系，其线性回归方程为，p=1．6601gC．1．999（I：la,A，C：p．mol·L-1），相关系数为0．9920，检出限（S／N=3）达1．8x10^-11mol·L-1，该法可用于自来水样中铜离子的检测。A novel vohammetric sensor based on molecularly imprinted polymer film has been developed for copper ion detec tion. The sensitive film was prepared by co-polymerization of o-phenylenediamine and copper ion on the carbon nanotubes modified glassy carbon electrode. The molecularly imprinted sensor was characterized by differential pulse vohammetry（DPV） and cyclic vol- tammetry（CV）. Under the optimum conditions, the linear relationships between current and logarithmic concentration were obtained in the range freml. 0 x 10-1 to 2.0 x 10-3 mol.L-1 ,with the linear regression equation lp= 19. 99-1. 6661gC（l：la,A,C：mol.L-1 ）, correlation coefficient 0. 9920. The detection limit of 1.8 x 10-11 mol. L-1 was achieved （ S/N = 3 ）. This sensor was used successfully for Cuz determination in drinking water.

关 键 词：铜离子 碳纳米管 分子印迹聚合物膜 电化学传感器 

分 类 号：O657[理学—分析化学]