Talbot外腔压窄线阵大功率半导体激光器输出谱宽  

Spectra narrowing of high-power diode laser array based on Talbot external cavity

作　　者：李元栋[1] 胡猛[1] 吴习文[1] 

机构地区：[1]镇江船艇学院,江苏镇江212003

出　　处：《强激光与粒子束》2013年第10期2561-2564,共4页High Power Laser and Particle Beams

摘　　要：线阵半导体激光器(LDA)内部发光元周期排列,基于Talbot效应,改进传统Littrow外腔窄线宽系统,在Littrow外腔中置入反射率为20%平平镜构成Talbot外腔以进一步窄化激光器输出谱宽,并将外腔窄线宽输出通过铷池进行吸收实验。实验结果表明:铷池对Tablot外腔输出吸收系数比Littrow外腔吸收系数相对提高42.9%,说明Talbot外腔能有效提高外腔输出谱宽的均匀性,提高半导体激光器泵浦效率。Many light emitting elements were periodically arranged in a high power diode laser array. Based on Talbot effect, the traditional Littrow external cavity narrow-linewidth system was improved. A Talbot external cavity was established by inserting a flat mirror with a reflection rate of 20% in the Littrow external cavity. The relative absorption coefficient was im- proved by 42.9% in rubidium pool absorption experiment, showing that the Talbot external cavity can improve output beam uni- formity and pumping efficiency of the diode laser array.

关 键 词：碱金属蒸气激光器 线阵半导体激光器 TALBOT效应 窄线宽 

分 类 号：O439[机械工程—光学工程]