导模提拉法生长Tb_3Sc_2Al_3O_(12)(TSAG)晶体及性质表征  

Properties Characterization of Tb_3Sc_2Al_3O_(12)( TSAG) Crystals Grown by Edge-defined Film-fed Growth Method

作　　者：施俐君[1] 郭莉薇[1] 魏庆科[1] 宋财根[1] 胡晓琳[1] 庄乃锋[1] 林树坤[1] 陈建中[1] 

机构地区：[1]福州大学化学化工学院,福州350108

出　　处：《人工晶体学报》2013年第9期1735-1740,1756,共7页Journal of Synthetic Crystals

基　　金：国家自然科学基金(50902022;51272044);福建省自然科学基金(2009J01243;2012J01033)

摘　　要：本文采用导模提拉法成功生长了Tb3Sc2Al3O12(TSAG)晶体,并对所生长晶体进行了物相分析和单晶结构分析,探讨了多晶原料的烧结温度对晶体颜色的影响。Sc3+和Al3+的浓度分布测试表明,导模提拉法能较好地克服因分凝效应引起的Sc3+浓度分布不均,可以生长获得浓度分布均匀的TSAG晶体。磁光性能测试表明,Sc3+掺入对晶体在400～1100 nm波长范围内的磁光性能影响不大,所生长TSAG晶体的费尔德常数仅比Tb3Al5O12(TAG)晶体低6%～8%。Tb3Sc2Al3O12（TSAG） crystal was successfully grown by the edge-defined film-fed growth method. The crysal structure was determined by powder XRD and single crystal X-ray diffraction analysis. The influence of the sintering temperature of polyerystalline materials on the crystal colonr was also investigated. The results of Sc3＋ and A13 ＋ concentrations in crystal show that the uneven distribution of Sc3 ＋ in crystal induced by the segregstion effects can be restrainted by EFG method. The test results of the magneto-optical effect show that as-grown TSAG crystal still has high Verdet constant, which only 6% -8% lower than that of TAG crystal in the wavelength of 400-1100 nm.

关 键 词：Tb3Sc2Al3O12(TSAG)晶体 导模提拉法 法拉第磁光效应 

分 类 号：O782[理学—晶体学]