Synthesis and Characterization of Indium Niobium Oxide Thin Films via Sol—Gel Spin Coating Method  

作　　者：Saeed Mohammadi Mohammad Reza Golobostanfard Hossein Abdizadeh 

机构地区：[1]School of Metallurgy and Materials Engineering,College of Engineering,University of Tehran [2]Center of Excellence for High Performance Materials,University of Tehran

出　　处：《Journal of Materials Science & Technology》2013年第10期923-928,共6页材料科学技术（英文版）

基　　金：Iran Initiative Nanotechnology Council for partially supporting this work;Mahar Fan Abzar Co.for AFM spectroscopy results

摘　　要：In the present study, niobium-doped indium oxide thin films were prepared by sol-gel spin coating technique. The effects of different Nb-doping contents on structural, morphological, optical, and electrical properties of the films were characterized by means of X-ray diffraction （XRD）, field emission scanning electron microscopy （FESEM）, atomic force microscopy （AFM）, UV-Vis spectroscopy, and four point probe methods. XRD analysis confirmed the formation of cubic bixbyite structure of In203 with a small shift in major peak position toward lower angles with addition of Nb. FESEM micrographs show that grain size decreased with increasing the Nb-doping content. Optical and electrical studies revealed that optimum opto-electronic properties, including minimum electrical resistivity of 119.4 × 10^-3 Ω cm and an average optical transmittance of 85% in the visible region with a band gap of 3.37 eV were achieved for the films doped with Nb-doping content of 3 at.%. AFM studies show that addition of Nb at optimum content leads to the formation of compact films with smooth surface and less average roughness compared with the prepared ln2O3 films.In the present study, niobium-doped indium oxide thin films were prepared by sol-gel spin coating technique. The effects of different Nb-doping contents on structural, morphological, optical, and electrical properties of the films were characterized by means of X-ray diffraction （XRD）, field emission scanning electron microscopy （FESEM）, atomic force microscopy （AFM）, UV-Vis spectroscopy, and four point probe methods. XRD analysis confirmed the formation of cubic bixbyite structure of In203 with a small shift in major peak position toward lower angles with addition of Nb. FESEM micrographs show that grain size decreased with increasing the Nb-doping content. Optical and electrical studies revealed that optimum opto-electronic properties, including minimum electrical resistivity of 119.4 × 10^-3 Ω cm and an average optical transmittance of 85% in the visible region with a band gap of 3.37 eV were achieved for the films doped with Nb-doping content of 3 at.%. AFM studies show that addition of Nb at optimum content leads to the formation of compact films with smooth surface and less average roughness compared with the prepared ln2O3 films.

关 键 词：Indium oxide Nb-doping Sol-gel spin coating Transparent conductive oxide Opto-electronic properties 

分 类 号：O484.1[理学—固体物理]