Eu-Ru共掺NiO-SnO_2复合纳米粒子薄膜的阻变特性  

Resistive Switching of Eu-Ru Co-doped NiO-SnO_2 Composite Nanoparticle Thin Films

作　　者：李建昌[1] 王玉磊[1] 徐彬[1] 侯雪艳[1] 

机构地区：[1]东北大学机械工程与自动化学院,辽宁沈阳110819

出　　处：《东北大学学报（自然科学版）》2013年第10期1469-1472,共4页Journal of Northeastern University(Natural Science)

基　　金：中央高校基本科研业务费专项资金资助项目(N110403001)

摘　　要：通过低温水浴法制备了Eu-Ru共掺杂NiO-SnO_2复合纳米粒子,透射电镜图像显示纳米粒子粒径均匀,选区电子衍射表明结晶性差,所测晶面间距与SnO_2和NiO相应卡片数据一致,水热机理分析表明纳米粒子由NiO-SnO_2微观p-n结组成.原子力显微镜测试薄膜表面平均粗糙度约0.25 nm,由于薄膜太薄及样品结晶性差,XRD分析未见明显衍射峰.电学测试表明纳米粒子薄膜具有可重复双极阻变特性,阈值电压约1 V,开关比约500.薄膜高阻态电学输运符合缺陷俘获载流子所致空间电荷限制导电机制,低阻态呈欧姆特性,故阻变机理应为电荷俘获及再释.Eu-Ru co-doped NiO-SnO2 composite nanoparticle thin films were prepared using sol- hydrothermal spin-coating method. The film structural and electrical properties were characterized by transmission electron microscopy, atomic force microscopy and current-voltage measurements. The results indicate that the film surfaces are flat and smooth with average roughness of about 0. 25 nm. The data of Miller indices and interplanar spacings from the selected area electron diffraction are consistent with that from the XRD card of NiO or SnO2, and the hydrothermal mechanism also shows that nanoparticles are composed of microscale p-n junctions of NiO-SnO2. The nanoparticle films exhibit reproducible resistive switching with threshold voltage of about 1 V and on/off ratio of 500. The current-voltage measurements indicate that the conduction is governed by the Ohmic law for the low resistive state, while the high resistive state is dominated by the space charge limited conduction. The switching mechanism can be ascribed to the charge trapping/detrapping process induced by the applied threshold electrical field. K

关 键 词：低温水浴法 NiO-SnO2复合纳米粒子 阻变特性 电荷俘获或释放 Eu-Ru共掺杂 

分 类 号：TQ630.1[化学工程—精细化工]