底部真空负压浸渗工艺制备β-SiC_p/Al电子封装材料  

β-SiC_p/Al Composites for Electronic Packaging Prepared by the Process of Bottom-Vacuum Negative Pressure Infiltration

作　　者：谢斌[1,2] 王晓刚[1,2,3] 华小虎[1,2,3] 易大伟[1,2,3] 

机构地区：[1]西安科技大学材料科学与工程学院,陕西西安710054 [2]陕西省硅镁产业节能与多联产工程技术研究中心,陕西西安710054 [3]陕西西科博尔科技有限责任公司,陕西西安710054

出　　处：《铸造》2013年第10期953-957,共5页Foundry

基　　金：国家自然科学基金资助项目(51074123);陕西省科学技术研究发展计划项目(2010TG-02);西安科技大学博士培育基金项目(2012QDJ034)

摘　　要：摘要：针对国内目前sic／A1在产业化中存在的诸多问题，选用W20和w60的β-SiC粉体，采用模压成型制备SiC预制体，并通过底部真空负压浸渗工艺制备了致密度为96％～98％、体积分数为55％～72％的β-SiCp/Al复合材料。XRD、SEM、CT和CTE测试分析表明：所制备的复合材料中存在MgAl20。尖晶石相，没有发现Al4C3脆性相；复合材料组织均匀，存在少量浸渗缺陷，孔洞较少；SiC体积分数为72％的复合材料在常温热度下的热膨胀系数为6．91×10-6／K，热导率为164．8W／（m·K），而sic体积分数为65％的复合材料的热膨胀系数为7．31×10-6／K，热导率为172．7W／（m．K）。According to the problems existing in the industrialization of SiCp/Al in domestic currently, SiC preforms were prepared by compression molding with W20 and W60 B-SiC powders, respectively. The SiCp/Al composites with relative density of 96%-98% and volume fraction of 55%-72% were fabricated bybottom-vacuum negative pressure infiltration. The results of XRD, SEM, CT and CTE analysis indicate that Mgml204 spinel phase exists in the composites, but Al4C3 brittle phase is not clearly observed. Furthermore, the composites have homogeneous microstructure with fewer defects. The coefficient of thermal expansion with volume fraction of 72% SiC can reach 6.91 × 10^-6K-1 and the thermal conductivity is 164.8 W/（m. K） at the normal temperature, while the coefficient of thermal expansion of those with volume fraction of 65% SiC is 7.31 × 1 0^-6K-1 and the thermal conductivity is 172.7 W/（m-K）.

关 键 词：无压浸渗 β-SiCp AL复合材料 热膨胀系数 热导率 

分 类 号：TB333[一般工业技术—材料科学与工程] TN604[电子电信—电路与系统]