适应直流偏磁抑制装置接入的零序电抗继电器动作特性分析  

Analysis of the Performance Characteristic of Zero-sequence Reactance Relay Designed to Accommodate DC Bias Suppression Device Access

作　　者：郑涛 朱先启[2] 徐振栋 刘连光 

机构地区：[1]新能源电力系统国家重点实验室(华北电力大学),北京市昌平区102206 [2]合肥供电公司,安徽省合肥市230022 [3]山东能源集团有限公司,山东省济南市250014

出　　处：《电网技术》2013年第10期2926-2931,共6页Power System Technology

基　　金：国家973重点基础研究发展计划(2012CB215206);中央高校基本科研业务费专项资金资助(JB2011011)~~

摘　　要：讨论了电阻型直流偏磁抑制装置接入对线路距离保护的影响,针对由抑制装置引发的保护拒动或误动问题,提出一种将零序电抗继电器与相间阻抗继电器相结合的保护方案,相间故障采用相间阻抗继电器,接地故障采用零序电抗继电器,并给出了相应判据的整定计算方法。PSCAD仿真结果表明,此方案能够在一定程度上对直流偏磁抑制装置接入后的线路不对称故障进行有效保护。The impacts of grid-connected resistance-type of DC bias suppression devices on distance relay of transmission line is analyzed in this paper. Based on the analysis of mal-operation of distance relay caused by the insertion of DC bias suppression devices, a protective scheme which combines zero sequence reactance relay with phase-to-phase impedance relay has been put forward. phase-to-phase impedance relay is used to protect phase-to-phase fault and zero sequence reactance relay is applied for protecting the ground fault. Corresponding setting criteria are also given in this paper. Finally, PSCAD simulation results show that the proposed scheme can provide effective protection for the asymmetrical fault of transmission line with the insertion of resistance-type of DC bias suppression device.

关 键 词：电阻型直流偏磁抑制装置 零序电抗继电器 相间阻抗继电器 

分 类 号：TM77[电气工程—电力系统及自动化]