Ⅲ族氮化物半导体异质结构中载流子的量子输运和自旋性质  

Quantum transport and spin properties of the carriers in III-nitride heterostructures

作　　者：唐宁[1] 段俊熙[1] 张姗[1] 许福军[1] 王新强[1] 沈波[1] 

机构地区：[1]北京大学物理学院,人工微结构和介观物理国家重点实验室,北京100871

出　　处：《中国科学：物理学、力学、天文学》2013年第10期1176-1187,共12页Scientia Sinica Physica,Mechanica & Astronomica

基　　金：国家重点基础研究发展计划(编号:2012CB619306,2013CB921901);国家自然科学基金(批准号:61376095,11174008,60990313)

摘　　要：Ⅲ族氮化物半导体具有宽的直接带隙,很强的极化电场,优异的物理特性,是发展高频、高温、高功率电子器件和光电子器件的优选材料.同时,Ⅲ族氮化物半导体有很长的电子自旋弛豫时间以及很高的居里温度,也成为近年来半导体自旋电子学研究的重要材料体系之一.本文介绍了用量子输运和自旋光电流方法对GaN基异质结构中载流子的量子输运和自旋性质的研究进展.对Ⅲ族氮化物半导体中的能带结构,子带占据和散射,自旋分裂及自旋轨道耦合机制等进行了讨论.Owing to their advantages of wide direct-band gap, excellent physical and chemical stability, high saturated electron drift velocity, and high dielectric breakdown field, III-nitride semiconductor materials are the most favorite materials in developing high-frequency, high-temperature and high-power electronic devices and optical devices. Owing to their advantages of long spin relaxation time and high Curie temperature, III-nitride semiconductor materials are the most favorite materials in developing spintronic devices. The magnetotransport methods at low temperatures and the circular photogalvanic effect at room temperature are introduced. The research status of the quantum transport and spin properties of the carriers in GaN-based heterostructures is reviewed.

关 键 词：宽禁带半导体 输运 自旋 

分 类 号：TN304[电子电信—物理电子学]