Mechanism of E' center induced by γ ray radiation in silica optical fiber material  

作　　者：LUO Wenyun XIAO Zhongyin WEN Jianxiang YIN Jianchong WU Wenkai CHEN Zhenyi WANG Zihua WANG Tingyun 

机构地区：[1]School of Communication and Information Engineering, Key Laboratory of Specialty Fiber Optics and Optical Access Networks,Shanghai University [2]School of Environmental and Chemical Engineering, Shanghai Applied Radiation Institute, Shanghai University

出　　处：《Nuclear Science and Techniques》2013年第4期28-31,共4页核技术（英文）

基　　金：Supported by National Program on Key Basic Research Project(973 Program,No.2012CB723405);Natural Science Foundation of China(No.60937003,61077068,61275090,61275051,and 61027015);Shanghai Natural Science Foundation(No.12ZR1411200)

摘　　要：The characteristics of the best known defect centers E' in silica optical fiber material irradiated with ray were investigated by ESR at room temperature.A mechanism model of production of the E' center defect was established.The production of E' center includes two processes creation and activation.The strained bonds(or oxygen replacement) in silica networks lead to the creation of new defects whose concentration increases linearly with the dose.The pre-existing defects produce the activation,which tends to saturation.According to this model,the relation of E' center concentration changing with irradiation dose was obtained theoretically.The results are in good agreement with the experimental results.The characteristics of the best known defect centers E＇ in silica optical fiber material irradiated with ray were investigated by ESR at room temperature.A mechanism model of production of the E＇ center defect was established.The production of E＇ center includes two processes creation and activation.The strained bonds（or oxygen replacement） in silica networks lead to the creation of new defects whose concentration increases linearly with the dose.The pre-existing defects produce the activation,which tends to saturation.According to this model,the relation of E＇ center concentration changing with irradiation dose was obtained theoretically.The results are in good agreement with the experimental results.

关 键 词：光纤材料 射线辐射 机制 石英 缺陷中心 二氧化硅 机理模型 缺陷产生 

分 类 号：TN253[电子电信—物理电子学]