SiO_2对SnO_2·CoO·Nb_2O_5压敏电阻非线性电学性质的影响  

Effect of SiO_2 Addition on the Nonlinear Electrical Properties of the SnO_2·CoO·Nb_2O_5 Varistor System

作　　者：陈洪存[1] 王矜奉[1] 王勇军[1] 李长鹏[1] 张沛霖[1] 钟维烈[1] 

机构地区：[1]山东大学物理系,济南250100

出　　处：《压电与声光》2000年第6期379-381,共3页Piezoelectrics & Acoustooptics

基　　金：国家自然科学基金资助项目!(5 0 0 72 0 13)

摘　　要：对 Si O2 掺杂的 Sn O2 · Co O· Nb2 O5 压敏电阻非线性电学性质进行了研究 ,并对其微观结构进行了电镜扫描 ,且对其晶界势垒高度进行了测量。实验表明 x(Si O2 ) =0 .3%掺杂的 Sn O2 · Co O· Nb2 O5 压敏电阻的非线性系数 α高达 30 ,并且具有最高的击穿电场 (375 V/ mm)。采用 Gupta- Carlson缺陷模型对晶界肖特基势垒高度随Si O2 的添加而变大的现象进行了理论解释。The effect of SiO 2 addition on the nonlinear electrical properties of the SnO 2·CoO·Nb 2O 5 Varistor System was investigated.The SnO 2·CoO·Nb 2O 5 varistor added with 0 3% SiO 2 has the nonlinear coefficient of α =30 and the highest breakdown electric field among the SiO 2 doped SnO 2·CoO·Nb 2O 5 varistor.To find the reason why the SnO 2·CoO·Nb 2O 5 varistor added with 0 3% SiO 2 has such a characteristic,the microstructures of the SiO 2 doped SnO 2·CoO·Nb 2O 5 varistors were examined,the voltage barrier height φ b at the grain boundaries for the SiO 2 doped SnO 2·CoO·Nb 2O 5 varistors were determined and the Gupta and Carlson defect model was considered.

关 键 词：压敏电阻 二氧化硅 非线性电学性质 

分 类 号：TM54[电气工程—电器] TN304.21[电子电信—物理电子学]