全息法研究Mg∶In∶LN晶体波导基片的光损伤  

Investigation on Photodamage of Mg∶In∶LiNbO_3 Waveguide Substrate by Holography Method

作　　者：王锐[1] 徐衍岭[1] 徐悟生[1] 赵朝忠[2] 王继扬[3] 

机构地区：[1]哈尔滨工业大学应用化学系,哈尔滨150001 [2]哈尔滨师范大学物理系,哈尔滨150080 [3]山东大学晶体材料国家重点实验室,济南250100

出　　处：《压电与声光》2000年第6期398-400,共3页Piezoelectrics & Acoustooptics

基　　金：国家重点基础研究"九七三"资助项目!(G19990 330 );黑龙江省教委基金资助项目

摘　　要：在 L N中掺进 x(Mg O) =3%和 x(In2 O3) =1%、2 % ,用 Czochralski法生长 Mg∶ 1% In∶ L N和 Mg∶2 % IN∶ L N晶体。以光斑畸变法测试晶体光损伤阈值 ,通过质子交换技术 (PE)制备 L N和 Mg∶ In∶ L N晶体光波导基片 ,用全息法研究晶体波导基片的光损伤。结果表明 ,PE∶ Mg∶ 1% In∶ L N的光损伤阈值比 PE∶ L N提高 2个数量级以上 ,PE∶ Mg∶ 2 % In∶ L N的光损伤阈值比 PE∶ L N提高 3个数量级以上。Doping x (MgO)=3% and x (In 2O 3)=1%,2% In∶LN crystal,Mg 1% In∶LN and Mg 2%∶In∶LN crystals were grown by Czochralski method.The photodamage threshold values of these crystals were measured by the facula aberration method.The LN and Mg∶In∶LN waveguide substrates were made by the proton exchange technology.The photodamage of these waveguide substrates was investigated by the holography method.The results show that the photodamage threshold value of PE∶Mg∶1% In∶LN and PE∶Mg 2%∶In∶LN is two and three orders of magnitude higher than that of PE∶LN,respectively.

关 键 词：Mg:In:LN晶体 波导基片 光损伤 全息法 

分 类 号：O734[理学—晶体学]