Si衬底上热壁外延制备GaAs单晶薄膜材料  

Growth of Monocrystalline GaAs Layer on Si by Hot Wall Epitaxy

作　　者：刘翔[1] 谭红琳[1] 吴长树[1] 张鹏翔[1] 赵德锐[1] 陈庭金[2] 廖世坤 吴刚[3] 杨家明[4] 

机构地区：[1]昆明理工大学,云南昆明650051 [2]云南师范大学,云南昆明650092 [3]昆明物理研究所,云南昆明650093 [4]昆明冶金研究院,云南昆明650051

出　　处：《半导体光电》2000年第6期433-434,438,共3页Semiconductor Optoelectronics

基　　金：云南省自然科学基金!资助项目 (99E0 0 0 9Q)

摘　　要：报道了采用热壁外延 (HWE)技术 ,在Si表面生长GaAs薄膜。先通过活化剂活化Si表面 ,再采取两步生长法外延GaAs单晶薄膜 ,最后进行断续多层循环退火 (IMCA)。经电子探针 (EPMA)、Raman光谱、Hall测量和荧光 (PL)光谱测试分析 ,证实在Si表面获得了近 4 μm厚的GaAs单晶薄膜。This paper reports the growth of GaAs layer on Si substrate by hot wall epitaxy (HWE).Si surface prior to epitaxy of GaAs layer is activated.Then two-step epitaxy is used to achieve GaAs layer.Finally,intermittent multi-layer cycle annealing (IMCA) is implemented to improve morphology and quality of the epitaxial layer.Measurement and analysis by electron probe micro-analysis (EPMA),Raman spectrum,Hall measurement and photo-luminescence (PL) confirm that GaAs layer with thickness of approximately 4 μm has been obtained.

关 键 词：热壁外延 异质外延 硅 砷化镓 单晶薄膜材料 

分 类 号：TN304.055[电子电信—物理电子学] TN304.054