氧等离子处理对多孔硅表面润湿性的影响  

Effects of Oxygen Plasma on Surface Wettability of Porous Silicon

作　　者：姜磊[1] 李兆敏[2] 杨丽敏[1] 李松岩[2] 孙乾[2] 张东[1] 王继乾[1] 

机构地区：[1]中国石油大学(华东)重质油国家重点实验室及生物工程与技术中心,山东青岛266580 [2]中国石油大学(华东)石油工程学院,山东青岛266580

出　　处：《中国表面工程》2013年第5期43-48,共6页China Surface Engineering

基　　金：国家自然科学基金(21204102;U1262102);中央高校基本科研业务费专项资金(13CX02061A;13CX05018A);中国石油大学(华东)科研启动基金(Y1204101)

摘　　要：表面润湿性是影响多孔硅实际应用的重要因素，对多孔硅表面润湿性的精确控制是其在生物移植、药物释放等领域实现广泛应用需要解决的关键科学问题之一。文中报道了4种不同孔径大小（10～1ooorim）、初始润湿性范围从高度亲水（接触角15°）到高度疏水（接触角139°）的多孔硅在氧等离子处理过程中表面润湿性的动态变化过程，发现其润湿性随着处理时间的增长迅速降低至极亲水状态。此外，在主要结果的基础上还拟合了出润湿性变化速率常数与孔径之间的初步规律及经验公式。The surface wettability plays an important role in the application of porous silicon. Precisely con trolling its surface wettability is one of the key scientific challenges for its further application in the fields such as implantation and drug release. The contact angle changes of four types of porous silicon were measured dur ing the oxygen plasma treatment using a range of samples with pore sizes （10-1 000 nm） and initial wettability from highly hydrophilic （15°） to highly hydrophobic （139°）. It found that the wettability rapidly reduced to extremly hydrophilic state with the growth of processing time. Based on the main observation, the correlation between the wettability change rate constant and the pore size was investigated and an empirical equation was developed.

关 键 词：多孔硅 润湿性 氧等离子 孔径 

分 类 号：O647.5[理学—物理化学]