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机构地区:[1]Key Laboratory of Modern Acoustics,MOE,Institute of Acoustics,Department of Physics,Nanjing University [2]Department of Physics,Nanjing Normal University [3]Department of Physics and Materials Science,City University of Hong Kong
出 处:《Chinese Physics B》2013年第10期52-55,共4页中国物理B(英文版)
基 金:Project supported by the National Basic Research Program of China(Grant Nos.2011CB922102 and 2013CB932901);the National Natural Science Foundation of China(Grant No.60976063);the Priority Academic Program Development(PAPD)of Higher Education Institutions of Jiangsu Province and HongKong Research Grants Council(RGC)General Research Funds(GRF)(Grant Nos.CityU 112510 and CityU 112212)
摘 要:The photoluminescence (PL) characteristics of hybrid β-FeSi2/Si and pure β-FeSi2 films fabricated by pulsed laser deposition at 20 K are investigated. The intensity of the 1.54-μm PL from the former is enhanced, but the enhancement vanishes when the excitation wavelength is larger than the widened band gap of Si nanocrystal. Time-resolved PL decay measurements reveal that the lifetime of the photo-excited carriers in the hybrid β-FeSi2/Si film is longer than that in the pure β-FeSi2 film, providing evidence that the PL enhancement results from the resonant charge transfer from nanocrystalline Si to β-FeSi2.The photoluminescence (PL) characteristics of hybrid β-FeSi2/Si and pure β-FeSi2 films fabricated by pulsed laser deposition at 20 K are investigated. The intensity of the 1.54-μm PL from the former is enhanced, but the enhancement vanishes when the excitation wavelength is larger than the widened band gap of Si nanocrystal. Time-resolved PL decay measurements reveal that the lifetime of the photo-excited carriers in the hybrid β-FeSi2/Si film is longer than that in the pure β-FeSi2 film, providing evidence that the PL enhancement results from the resonant charge transfer from nanocrystalline Si to β-FeSi2.
关 键 词:β-FeSi2 nanocrystal photoluminescence resonant charge transfer
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