MEH-PPV/Alq_3-based bulk heterojunction photodetector  

作　　者：Zubair Ahmad Mahdi Hasan Suhail Issam Ibrahim Muhammad Wissam Khayer Al-Rawi Khaulah Sulaiman Qayyum Zafar Ahmad Sazali Hamzah Zurina Shaameri 

机构地区：[1]Low Dimensional Materials Research Center,Department of Physics,Faculty of Science,University of Malaya,50603 Kuala Lumpur,Malaysia [2]Department of Physics,College of Science,University of Baghdad,Iraq [3]Department of Physics,College of Science,University of Anbar,Iraq [4]Organic Synthesis Laboratory,Institute of Science,Universiti Teknologi MARA,40450 Shah Alam,Malaysia

出　　处：《Chinese Physics B》2013年第10期192-196,共5页中国物理B（英文版）

基　　金：Project supported by the Long Term Research Grant Scheme(LRGS),Ministry of Higher Education,Malaysia(Grant No.LR003/2011A)

摘　　要：In this paper, we present the effect of varied illumination levels on the electrical properties of the organic blend bulk heterojuction （BHJ） photodiode. To prepare the BHJ blend, poly（2-methoxy-5（2P-ethylhexyloxy） phenyleneviny- lene （MEH-PPV） and aluminum-tris-（8-hydroxyquinoline） （Alq3） are used as donor and acceptor materials, respectively. In order to fabricate the photodiode, a 40-nm thick film of poly（3, 4-ethylendioxytbiophene）：poly（styrensulfonate） （PE- DOT：PSS） is primarily deposited on a cleaned ITO coated glass substrate by spin coating technique. The organic photo- sensitive blend is later spun coated on the PEDOT：PSS layer, followed by the lithium fluoride （LiF） and aluminium （A1） thin films deposition by thermal evaporation. The optical properties of the MEH-PPV：Alq3 blend thin films are investigated using photoluminescence （PL） and UV-Vis spectroscopy. The photodiode shows good photo-current response as a function of variable illumination levels. The responsivity value - 8 mA/W at 3 V is found and the ratio of photo-current to dark current （lph/IDark） is found to be 1.24.In this paper, we present the effect of varied illumination levels on the electrical properties of the organic blend bulk heterojuction （BHJ） photodiode. To prepare the BHJ blend, poly（2-methoxy-5（2P-ethylhexyloxy） phenyleneviny- lene （MEH-PPV） and aluminum-tris-（8-hydroxyquinoline） （Alq3） are used as donor and acceptor materials, respectively. In order to fabricate the photodiode, a 40-nm thick film of poly（3, 4-ethylendioxytbiophene）：poly（styrensulfonate） （PE- DOT：PSS） is primarily deposited on a cleaned ITO coated glass substrate by spin coating technique. The organic photo- sensitive blend is later spun coated on the PEDOT：PSS layer, followed by the lithium fluoride （LiF） and aluminium （A1） thin films deposition by thermal evaporation. The optical properties of the MEH-PPV：Alq3 blend thin films are investigated using photoluminescence （PL） and UV-Vis spectroscopy. The photodiode shows good photo-current response as a function of variable illumination levels. The responsivity value - 8 mA/W at 3 V is found and the ratio of photo-current to dark current （lph/IDark） is found to be 1.24.

关 键 词：MEH-PPV ALQ3 bulk heterojunction PHOTODIODE 

分 类 号：TB383.1[一般工业技术—材料科学与工程] TN36[电子电信—物理电子学]