Effect of vacancy charge state on positron annihilation in silicon  

作　　者：刘建党 成斌 孔伟 叶邦角 

机构地区：[1]State Key Laboratory of Particle Detection and Electronics,University of Science and Technology of China [2]Department of Modern Physics,University of Science and Technology of China

出　　处：《Chinese Physics B》2013年第10期394-396,共3页中国物理B（英文版）

基　　金：Project supported by the Fundamental Research Funds for the Central Universities and the National Natural Science Fundation of China(Grant Nos.11105139 and 11175171)

摘　　要：The charge-state-dependent lattice relaxation of mono-vacancy in silicon is studied using the first-principles pseu- dopotential plane-wave method. We observe that the structural relaxation for the first-neighbor atoms of the mono-vacancy is strongly dependent on its charge state. The difference in total electron density between with and without charge states in mono-vacancy and its relevant change due to the localized positron are also examined by means of first-principles simu- lation, demonstrating the strong interplay between positron and electron. Our calculations reveal that the positron lifetime decreases with absolute charge value increasing.The charge-state-dependent lattice relaxation of mono-vacancy in silicon is studied using the first-principles pseu- dopotential plane-wave method. We observe that the structural relaxation for the first-neighbor atoms of the mono-vacancy is strongly dependent on its charge state. The difference in total electron density between with and without charge states in mono-vacancy and its relevant change due to the localized positron are also examined by means of first-principles simu- lation, demonstrating the strong interplay between positron and electron. Our calculations reveal that the positron lifetime decreases with absolute charge value increasing.

关 键 词：VACANCY charge state positron annihilation 

分 类 号：O469[理学—凝聚态物理]