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作 者:闫国英 白子龙 李慧玲 傅广生 刘富强 于威 王江龙 王淑芳
机构地区:[1]The College of Physics Science and Technology,Hebei University
出 处:《Chinese Physics B》2013年第10期500-503,共4页中国物理B(英文版)
基 金:Project supported by the National Basic Research Program of China (Grant No.2011CB612305);the National Natural Science Foundation of China (Grant No.51372064);the One Hundred Persons Project of Hebei Province of China (Grant No.CPRC001);the Science and Technology Research Project of Colleges and Universities in Hebei Province,China (Grant No.QN20131040)
摘 要:A Bi2Sr2Co2Oy/Si heterojunction is obtained by growing a layer of p-type oxygen-deficient Bi2Sr2Co2Oy film on a commercial n-type silicon wafer by pulsed laser deposition. Its rectifying and photovoltaic properties are studied in a wide temperature range from 20 K to 300 K. The transport mechanism under the forward bias can be attributed to a trap- filled space-charge-limited current conduction mechanism. Under the irradiation of a 532-nm continuous wave laser, a clear photovoltaic effect is observed and the magnitude ofphotovoltage increases as the temperature decreases, The results demonstrate the potential application of a Bi2SrzCo2Oy-based heterojunction in the photoelectronic devices.A Bi2Sr2Co2Oy/Si heterojunction is obtained by growing a layer of p-type oxygen-deficient Bi2Sr2Co2Oy film on a commercial n-type silicon wafer by pulsed laser deposition. Its rectifying and photovoltaic properties are studied in a wide temperature range from 20 K to 300 K. The transport mechanism under the forward bias can be attributed to a trap- filled space-charge-limited current conduction mechanism. Under the irradiation of a 532-nm continuous wave laser, a clear photovoltaic effect is observed and the magnitude ofphotovoltage increases as the temperature decreases, The results demonstrate the potential application of a Bi2SrzCo2Oy-based heterojunction in the photoelectronic devices.
关 键 词:Bi2Sr2Co2Oy/Si heterojunction rectifying characteristics photovoltaic effect space-charge-limited current
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