铜铟镓硒薄膜太阳电池的研究进展  

Latest Development of Copper-Indium-Gallium-Selenium Thin Film Solar Cell

作　　者：陈超铭[1] 范平[1] 梁广兴[1] 郑壮豪[1] 罗景庭[1] 张东平[1] 

机构地区：[1]深圳大学物理科学与技术学院薄膜物理与应用研究所深圳市传感器技术重点实验室,深圳518060

出　　处：《真空科学与技术学报》2013年第10期1011-1018,共8页Chinese Journal of Vacuum Science and Technology

基　　金：深圳市科技计划重点项目(JC201005250053A);基础研究项目(JCYJ20120817163755062);深圳市科技研发基金条件与平台建设计划重点实验室项目(CXB201105060067A)

摘　　要：综述了国内外铜铟镓硒(CIGS)薄膜太阳电池的研究现状;概述了CIGS薄膜太阳电池的典型结构及其吸收层的材料特性;重点介绍了CIGS薄膜吸收层的制备方法,如多元共蒸发法、预置层后硒化法、单靶磁控溅射法、离子束溅射法和电沉积法;最后探讨了CIGS薄膜太阳电池存在的问题及今后研究方向。The latest progress in the development of copper-indium-gallium-selenium （CIGS） thin film solar cell was tentatively reviewed in thought provoking way. The discussion centered on：i）. The typical structures and materials characteristics of the absorption layers; ii） The strengths and weaknesses of a variety of the synthesis techniques of CIGS absorbers, including co-evaporation, magnetron sputtering of the metal precursor followed by selenization, simple magnetron sputtering, and some non-vacuum synthesis techniques, such as electroplating, spraying of nano-particle, and screen printing; and iii）. The development trends, existing technical problems, and possible solutions were also briefly discussed.

关 键 词：太阳电池 铜铟镓硒 薄膜 制备方法 

分 类 号：TM914.42[电气工程—电力电子与电力传动]