低能N^+离子束辐照甜叶菊种子的当代效应研究  

Effects of low energy N^+ ion beam implantation on Stevia rebaudiana seeds

作　　者：闵笛[1] 陈达伟[1] 苏婷婷[1] 汤其坤[1] 王钰[1,2] 

机构地区：[1]安徽大学资源与环境工程学院,合肥230601 [2]安徽省中药材产业化技术研发中心,合肥230601

出　　处：《生物学杂志》2013年第5期41-44,共4页Journal of Biology

基　　金：安徽省科技攻关(12010302065);安徽大学研究生学术创新研究项目(yqh100123)

摘　　要：用不同剂量低能N+离子注入甜叶菊种子后,观察并记录种子发芽率、幼苗和移栽植株性状及糖苷含量的影响。结果表明低剂量的氮离子束能促进甜叶菊发芽,高剂量则抑制其发芽;随着辐照剂量的增高,移栽植株株高、糖苷含量等主要指标出现了先下降后升高的"马鞍型"曲线;经辐照后出现了植株高、叶片多、叶面积大、糖苷含量高的有益变异,为进一步品种选育和诱变机理研究奠定基础。Dry seeds of Stevia rebaudiana were implanted with different dose of low energy N ^＋ ion beam. The results showed as fol- lows ： stevia germination rate was promoted by low dose of N ^＋ ion beam, inhibited by high dose ; the plant height and the steviol glyco- sides content presented ＂saddle like model＂ which decreased at the begin, then increased and decreased further again with increase of irradiation doses ; mutational spectra, including plant heights, more leaf numbers, large leaves and high steviol glycosides content were selected after irradiation.

关 键 词：甜叶菊 低能N+离子束 辐照 

分 类 号：Q691.5[生物学—生物物理学] S566.9[农业科学—作物学]