Al掺杂6H-SiC铁磁性研究(英文)  

Ferromagnetism in Etched Aluminum-doped 6H-SiC

作　　者：臧源[1] 李连碧[2] 林生晃[1] 曹琳[1] 

机构地区：[1]西安理工大学自动化学院电子工程系,西安710048 [2]西安工程大学应用物理系,西安710048

出　　处：《固体电子学研究与进展》2013年第5期410-414,共5页Research & Progress of SSE

基　　金：陕西省自然科学基金资助项目(2012JQ8009);陕西省教育厅自然科学专项基金资助项目(12JK0546);西安工程大学博士科研启动基金资助项目(BS1129)

摘　　要：使用物理气象沉积法生长了轻Al掺杂6H-SiC样品,并使用超导量子干涉磁强计(SQUID)对无腐蚀及腐蚀后的样品进行了测试,发现了腐蚀后的样品在室温下表现出铁磁性。经过计算,样品磁信号并非来源于腐蚀剂KOH及K2CO3。同时腐蚀后的样品形貌表明杂质聚集在腐蚀后的缺陷附近从而形成了一定的铁磁性,因此缺陷被腐蚀放大是样品形成铁磁性的主要原因。The lightly Al-doped 6H-SiC samples were synthesized by physical vapor transport （PVT） method in this paper. The nonerosive and etched samples were characterized with superconducting quan- tum interference device （SQUID） magnetometer. And the testing results show that the etched sample can reveal typical room-temperature ferromagnetism characteristic while the nonerosive one can not. This phe- nomenon is firstly reported for the element-doped 6H-SiC. Based on the analysis for the calculation of magnetic moments induced by magnetic atoms, it is concluded that the magnetic atoms coming from the KOH and K2CO3 may not contribute to the observed magnetic signal. However, the morphology of the etched sample indicates that the magnified defects may couple with the residual impurities to introduce fer- romagnetism order. Namely, these defects may offer a carrier for mediating ferromagnetism.

关 键 词：6H-SIC AL掺杂 铁磁性 

分 类 号：O482.523[理学—固体物理]