p型Na掺杂ZnMgO薄膜的光电导性能  

Photoconductivity of p-Type Na-doped ZnMgO Thin Films

作　　者：薛雅[1] 叶志镇[1] 陈凌翔[1] 叶春丽[1] 

机构地区：[1]浙江大学硅材料国家重点实验室,浙江杭州310027

出　　处：《材料科学与工程学报》2013年第5期632-634,共3页Journal of Materials Science and Engineering

基　　金：国家自然科学基金资助项目(51172204)

摘　　要：采用脉冲激光沉积(PLD)方法在石英衬底上制备p型Na掺杂ZnMgO薄膜,薄膜在氮气气氛中600℃退火60s,具有较好的光电性能。在室温下分别用波长254nm的紫外光和波长630nm的红色激光对样品进行了光电导性能测试。两种光照下,光电流均瞬间上升,且光响应度与外加偏压具有线性相关性。紫外光照下p型Na掺杂ZnMgO薄膜的光电流变化比红色激光照射下要显著。Na-doped ZnMgO thin films with excellent electrical properties were prepared on quartz substrates by pulsed laser deposition. The as-grown films were annealed in N2 atmosphere at 600℃ for 60 s. Photocurrents were measured under a bias of 6 V in air at room temperature when the film was irradiated by either 254nm ultraviolet beam or 630nm red laser beam for 20 s. The film exhibits a higher current intensity after either 254nm ultraviol significantly when the film is laser beam. et illumination or red laser illumination. The photocurrent changes more exposed to the 254nm ultraviolet beam than that of the film exposed to the red

关 键 词：Na掺杂 p型ZnMgO 光电导 

分 类 号：O484.4[理学—固体物理]