Influence of Ga and In on microstructure and electrochemical properties of Mg anodes  

合金元素Ga和In对Mg阳极组织和电化学性能的影响(英文)

作　　者：冯艳[1] 王日初[1] 彭超群[1] 

机构地区：[1]中南大学 材料科学与工程学院,长沙410083

出　　处：《Transactions of Nonferrous Metals Society of China》2013年第9期2650-2656,共7页中国有色金属学报（英文版）

基　　金：Project(20110162120051)supported by Specialized Research Fund for the Doctor Program of Higher Education,China;Project(51101171)supported by the National Natural Science Foundation of China

摘　　要：The influence of Ga and In on the electrochemical properties of Mg anode materials were investigated by the polarization and galvanostatic curve tests. The microstructure and the corroded surface of the Mg-In-Ga alloys were observed by scanning electron microscopy （SEM）. The corrosion product of the Mg-0.8%In （mass fraction） and Mg-0.8%Ga-0.3%In alloy were determined by X-ray diffraction. The results show that no second phase exists in the Mg-xIn （x=0-0.8%） allloys. Intergranular compounds containing Ga and In elements occur in the Mg-0.8%In-xGa （x=0-0.8%） alloys. The addition of In into Mg as well as the addition of 0.05%-0.5%Ga into Mg-In alloy promotes the corrosion resistance. The addition of Ga into Mg-In alloys also promotes the electrochemical activity. The Mg-0.8%In-0.8%Ga alloy has the most negative mean potential,-1.682 V, which is more negative than -1.406 V in AZ91D. The corrosion type of the Mg-In-Ga alloys is general corrosion and the corrosion product is Mg（OH）2.采用动电位极化和恒电流曲线测试合金元素Ga和In对Mg阳极材料电化学性能的影响。采用扫描电镜法分析Mg In Ga合金的显微组织和腐蚀表面,并用X射线衍射法检测Mg 0.8%In合金和Mg 0.8%Ga 0.3%In合金的腐蚀产物。结果表明:Mg xIn(x=0 0.8%)合金中没有第二相出现,Mg 0.8%In xGa(x=0 0.8%)合金中存在富含Ga和In元素的晶间化合物。合金元素In和0.05%0.5%Ga的添加提高了镁阳极的耐腐蚀性能,Ga元素的添加更促进了Mg In合金的电化学活性。Mg 0.8%In 0.8%Ga合金的平均电位最负,为1.682 V,此电位比AZ91D合金的1.406 V更负。Mg In Ga合金的腐蚀类型是全面腐蚀,其腐蚀产物是Mg(OH)2。

关 键 词：Mg anode alloying element GA In galvanostatic curve corrosion resistance electrochemical activity 

分 类 号：TG146.22[一般工业技术—材料科学与工程]