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机构地区:[1]Xinjiang Vocational & Technical College of Communications [2]School of Electronic and Information Engineering,Xi'an Jiaotong University [3]Colleges of Information Science and Engineering,Xinjiang University
出 处:《Optoelectronics Letters》2013年第6期401-404,共4页光电子快报(英文版)
基 金:supported by the Xinjiang Science and Technology Project(No.2012211B01)
摘 要:Washboard belt-like zinc selenide(ZnSe)nanostructures are successfully prepared by a simple chemical vapor deposition(CVD)technology without catalyst.The phase compositions,morphologies and optical properties of the nanostructures are investigated by X-ray diffraction(XRD),scanning electron microscopy(SEM),high-resolution transmission electron microscopy(HRTEM)and photoluminescence(PL)spectroscop,respectively.A vapor-liquid mechanism is proposed for the formation of ZnSe belt-like structures.Strong PL from the ZnSe nanostructure can be tuned from 462 nm to 440 nm with temperature varying from 1000°C to 1200°C,and it is demonstrated that the washboard belt-like ZnSe nanostructures have potential applications in optical and sensory nanotechnology.This method is expected to be applied to the synthesis of other II-VI groups or other group’s semiconducting materials.Washboard belt-like zinc selenide (ZnSe) nanostructures are successfully prepared by a simple chemical vapor deposi- tion (CVD) technology without catalyst. The phase compositions, morphologies and optical properties of the nanos- tructures are investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), high-resolution transmis- sion electron microscopy (HRTEM) and photoluminescence (PL) spectroscop, respectively. A vapor-liquid mecha- nism is proposed for the formation of ZnSe belt-like structures. Strong PL from the ZnSe nanostructure can be tuned from 462 nm to 440 nm with temperature varying from 1000 ℃ to 1200 ℃, and it is demonstrated that the washboard belt-like ZnSe nanostructures have potential applications in optical and sensory nanotechnology. This method is ex- pected to be applied to the synthesis of other II-VI groups or other group's semiconducting materials.
关 键 词:光致发光特性 纳米结构 带状结构 硒化锌 合成 高分辨透射电子显微镜 扫描电子显微镜 板
分 类 号:TB383.1[一般工业技术—材料科学与工程] TN304.24[电子电信—物理电子学]
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