Morphology of CIGS thin films deposited by single-stage process and three-stage process at low temperature  

作　　者：张嘉伟 薛玉明 李微 赵彦民 乔在祥 

机构地区：[1]Tianjin Key Laboratory of Film Electronic and Communication Devices,School of Electronics Information Engineering,Tianjin University of Technology [2]National Key Laboratory of Power Sources,Tianjin Institute of Power Sources

出　　处：《Optoelectronics Letters》2013年第6期449-453,共5页光电子快报（英文版）

基　　金：supported by the National High Technology Research and Development Program of China(No.2012AA050701)

摘　　要：Cu(In,Ga)Se2(CIGS)thin films are prepared by a single-stage process and a three-stage process at low temperature in the co-evaporation equipment.The quite different morphologies of CIGS thin films deposited by two methods are characterized by scanning electron microscopy(SEM).The orientation of CIGS thin films is identified by X-ray diffraction(XRD)and Raman spectrum,respectively.Through analyzing the film-forming mechanisms of two preparation processes,we consider the cause of such differences is that the films deposited by three-stage process at low temperature evolve from Cu-poor to Cu-rich ones and then back to Cu-poor ones.The three-stage process at low temperature results in the CIGS thin films with the(220)/(204)preferred orientation,and the ordered vacancy compound(OVC)layer is formed on the surface of the film.This study has great significance to large-scale industrial production.Cu（In,Ga）Se2 （CIGS） thin films are prepared by a single-stage process and a three-stage process at low temperature in the co-evaporation equipment. The quite different morphologies of CIGS thin films deposited by two methods are characterized by scanning electron microscopy （SEM）. The orientation of CIGS thin films is identified by X-ray dif- fraction （XRD） and Raman spectrum, respectively. Through analyzing the film-forming mechanisms of two prepara- tion processes, we consider the cause of such differences is that the films deposited by three-stage process at low tem- perature evolve from Cu-poor to Cu-rich ones and then back to Cu-poor ones. The three-stage process at low tempera- ture results in the CIGS thin films with the （220）/（204） preferred orientation, and the ordered vacancy compound （OVC） layer is formed on the surface of the film. This study has great significance to large-scale industrial production.

关 键 词：CIGS薄膜 薄膜沉积 低温度 形态 三阶 工艺 单级 扫描电子显微镜 

分 类 号：TB43[一般工业技术]