一种新型电流模式带隙基准源的设计  

Design of a Novel Current-Mode Bandgap Reference Source

作　　者：胡勇[1] 彭晓宏[1] 刘云康[1] 吕本强[1] 朱治鼎[1] 

机构地区：[1]北京工业大学集成电路与系统集成实验室,北京100124

出　　处：《微电子学》2013年第4期457-459,463,共4页Microelectronics

基　　金：国家自然科学基金资助项目(61204040;60976028);北京市自然科学基金资助项目(4123092);教育部博士点基金资助项目(20121103120018)

摘　　要：提出了一种新型电流模式的带隙基准电压源结构,与传统带隙基准源不同,通过电流模式高阶曲率补偿技术,消除了高阶温度系数对基准电压的影响,得到一个与温度相关性较小的基准电压。电路采用Chartered 0.35μm工艺进行设计,仿真验证结果表明,在-40℃～125℃温度范围内,温度系数为7.25×10-6/℃,基准电压平均值为1.114V,电源抑制比为-89.28dB。A novel current-mode bandgap voltage reference source was presented. In this circuit, a reference voltage with minimal temperature-dependency was obtained by using current-mode higher-order curvature compensation to eliminate effects of higher-order temperature coefficient on reference voltage. Simulation based on Chartered 0. 35/lm process showed that the novel reference source had a temperature coefficient of 7. 25× 10-6/℃ in the temperature range from -40 ℃ to 125 ℃, an averaged reference voltage of 1. 114 V, and a power supply rejection ratio of -89. 28 dB.

关 键 词：带隙基准源 曲率补偿 温度系数 电源抑制比 

分 类 号：TN431.1[电子电信—微电子学与固体电子学]