基于遗传算法的开关电流存储电路的设计  

Design of a Switched Current Memory Circuit Based on Multi-Objective Genetic Algorithm

作　　者：任晋华[1] 王友仁[1] 

机构地区：[1]南京航空航天大学自动化学院,南京210016

出　　处：《微电子学》2013年第5期628-632,636,共6页Microelectronics

基　　金：航空科学基金资助项目(2011ZD52050)

摘　　要：针对开关电流存储电路存在固有误差和电路器件参数需要大量手工迭代计算等难题,提出基于遗传算法的开关电流存储电路设计方法。其主要思想是以Class AB栅极接地存储电路为基础,对其进行小信号模型分析,借助遗传算法对电路的电荷注入误差和时间响应性能进行多目标优化,获取电路中器件参数的最优Pareto解。采用0.5μm CMOS工艺参数,对电路进行PSPICE仿真测试。结果表明,优化设计的电路具有存储精度高、响应速度快等优点。To deal with the inherent error of switched current memory circuit and the complex manual iterative computation of device parameters, the multi-objective genetic algorithm was introduced. Small signal circuit of the grounded gate Class AB memory circuit was studied, and the design scheme was optimized based on multi-objective genetic algorithm. Pareto from was generated in optimizing two main conflicting parameters of the circuit： settling time and charge injection. Based on 0. 5 μm CMOS process, PSPICE simulation was made to validate the design. Results indicated that this memory cell had high accuracy and fast settling time.

关 键 词：CLASS AB栅极接地 开关电流 遗传算法 多目标优化 

分 类 号：TN432[电子电信—微电子学与固体电子学]