一种快速升压的片上电荷泵电路设计  

A Design of Fast-Setting on-Chip Charge Pump Circuit

作　　者：翟艳男[1] 程继航[1] 汤艳坤[1] 石静苑[1] 焦阳[1] 

机构地区：[1]空军航空大学,长春130022

出　　处：《电子器件》2013年第5期676-679,共4页Chinese Journal of Electron Devices

摘　　要：设计了一种快速升压的片上电荷泵电路,该电路由时钟产生电路和电荷泵核组成。电荷泵核基于传统Dickson电荷结构,在前四级引入预充管,增加节点初始电压,提高电荷泵升压速度,时钟产生电路能产生占空比约为30%的稳定时钟信号,用它驱动电荷泵核可以减小充放电流失配等问题,进一步提高电荷泵升压速度。基于华虹NEC 0.35μs CMOS工艺,HSPICE仿真结果显示:在5 V电源电压下,电荷泵仅需要57.625μs就可以从0升压到20 V,比传统的MOS管Dickson电荷泵快了20.055μs。A circuit of fast-setting charge pump on-chip is designed based on the Dickson circuit. The charge pump circuit,which is improved,increases the initial node voltage. With the consideration of the current mismatch,the accurate clock of the duty circle about 30% is proposed. The HSPICE simulation result indicates that the setting time from 0 V to 20 V only needs 57. 625 μs for the charge pump,and it is faster than the traditional MOSFET Dickson charge pump 20. 055 μs.

关 键 词：集成电路 电荷泵 HSPICE仿真 上升时间 压控振荡器 

分 类 号：TN402[电子电信—微电子学与固体电子学]