三层复合PI薄膜厚度比对其介电性能影响  

The Influence of Thickness Ratio of Three-layer PI Composite Films on Dielectric Properties

作　　者：陈昊[1] 李术林[1] 杨瑞宵[1] 范勇[1] 

机构地区：[1]哈尔滨理工大学材料科学与工程学院,黑龙江哈尔滨150040

出　　处：《哈尔滨理工大学学报》2013年第5期10-12,17,共4页Journal of Harbin University of Science and Technology

基　　金：国家自然科学基金(50373008)

摘　　要：利用微乳化-热液法制备纳米分散液,制备了掺杂层与中间纯聚酰亚胺(PI)层厚度比不同的三层复合薄膜.在相同环境条件下通过透射电镜(TEM)、击穿场强和耐电晕测试分别对三层复合薄膜的微观结构和纳米掺杂层厚度比例的变化与介电性能的影响进行了分析.TEM测试结果表明纳米粒子在有机基体中的分散均匀;介电强度测试和耐电晕测试表明随掺杂层厚度比例的增加,击穿场强逐渐下降,耐电晕性能呈先上升后下降趋势.Micro emulsion-hydrothermal method was used in preparing a series of three-layer PI composite films, which have different thickness ratio of doped PI layer and pure PI layer. Their microstructure were tested by TEM and the dielectric properties were measured respectively by test of breakdown strength and electric corona, in the same condition. The dimension scale of composite films was clearly shown from TEM test, and nano-particles dispersed well in organic matrix. It can be observed that the breakdown strength is decreased, and electric corona has a trend of increasing and then decreasing with the increase of thickness ratio of doped PI layer.

关 键 词：聚酰亚胺薄膜 纳米杂化 TEM 击穿场强 耐电晕 

分 类 号：TM215.3[一般工业技术—材料科学与工程]