化学蚀刻法制备纳米硅线作为高能锂离子电池的负极  

Si Nanowire Anode Prepared by Chemical Etching for High Energy Density Lithium-ion Battery

作　　者：李剑文[1] 周爱军[1] 刘兴泉[1] 李晶泽[1] 

机构地区：[1]电子科技大学微电子与固体电子学院,电子薄膜与集成器件国家重点实验室,成都610054

出　　处：《无机材料学报》2013年第11期1207-1212,共6页Journal of Inorganic Materials

基　　金：国家自然科学基金(21073029,51211140045);教育部博士点基金(20100185110019);新世纪人才计划(NCET-10-0296);中央高校基本科研业务费(ZYGX2012Z003)~~

摘　　要：采用金属催化剂诱导化学蚀刻法首先在单晶硅片上制备出具有高长径比的纳米硅线阵列,然后通过超声振荡法将硅线阵列破碎为纳米硅线粉体,最后将其作为锂离子电池的负极材料,系统研究了金属银催化剂制备过程和各向异性化学蚀刻过程对硅片表面形貌特征的影响,发现银催化剂在蚀刻过程出现溶解/再沉积现象。通过优化AgNO3、HF、H2O2等试剂的浓度,在大面积范围内得到了高长径比的纳米硅线阵列。借助超声波的作用将硅线从硅片上切割下来,制备成纳米硅线负极进行了充放电循环测试,观察到标准的硅锂合金/去合金化反应平台,前五次循环的比容量均超过1800 mAh/g。Silicon nanowire arrays were fabricated by metal-assisted chemical etching of single crystal silicon wafer. Then the silicon nanowire powder was obtained via ultrasonicating from silicon wafer and utilized as the anode electrode material of lithium ion battery. The effects of Ag catalyst deposition process and the subsequent anisotropic chemical etching on the formation of silicon nanowires were systematically investigated. The redistribution of Ag particles was found during the chemical etching. The large-area silicon nanowire arrays with proper length-diameter ratio were obtained by optimizing the concentration of AgNO3, HF and H2O2 solution. The silicon nanowires exhibited the classical alloy-reaction plateaus of silicon and the specific capacity above 1800 mAh/g prior to the sixth cycle.

关 键 词：锂离子电池 高储能 湿化学蚀刻法 纳米硅线 

分 类 号：O613[理学—无机化学]