溶胶凝胶法制备NiO掺杂CaCu_3Ti_4O_(12)薄膜(英文)  

NiO-doped CaCu_3Ti_4O_(12) Thin Film by Sol-Gel Method

作　　者：徐东[1,2] 宋琪[1] 张柯[1] 徐红星[1] 杨永涛[1] 于仁红 

机构地区：[1]江苏大学材料科学与工程学院,镇江212013 [2]电子科技大学电子薄膜与集成器件国家重点实验室,成都610054 [3]常州明尔瑞陶瓷有限公司,常州213102

出　　处：《无机材料学报》2013年第11期1270-1274,共5页Journal of Inorganic Materials

基　　金：Specialized Research Fund for the Doctoral Program of Higher Education of China(20123227120021);Natural Science Foundation of Jiangsu Province(BK2012156);Universities Natural Science Research Project of Jiangsu Province(13KJB430006);Opening Project of State key Laboratory of Electronic Thin Films and Integrated Devices(KFJJ201105);Application Program for Basic Research of Changzhou(CJ20125001)

摘　　要：用溶胶凝胶法制备纯CaCu3Ti4O12(CCTO)薄膜以及NiO掺杂CaCu3-x Nix Ti4O12(CCNTO)薄膜(x=0.10、0.20、0.30),研究了掺杂NiO对CCTO介电性能以及微观结构的影响。通过AFM图片可以看出,掺杂NiO的CCTO薄膜的晶粒尺寸比不掺杂NiO的CCTO薄膜的晶粒尺寸小。当x=0.2时,CCNTO薄膜的漏电流最小,最小值为0.546 mA,同时具有最大阈值电压与最大非线性系数,最大值分别为81 V/mm和1.9。当Ni掺杂量达到一定程度时,CCNTO薄膜的介电常数就会增加,总体来说,随着Ni的掺杂量增加,CCNTO薄膜的介电损耗呈上升趋势。Pure CaCu3Ti4O12 （CCTO） thin film and NiO-doped CaCu3-xNixTi4O12 （CCNTO） thin film with x=0.10, 0.20 and 0.30 were prepared by Sol-Gel method. The effects of NiO on the dielectric properties and microstructure revolution of CCTO were studied. The crystalline structure and the surface morphology of the films were markedly influenced by NiO content. AFM images of the CaCu3-xNixTi4O12 samples showed that the grain size of Ni-doped CCTO was smaller than the grain size of CCTO without Ni doping. For the CCNTO thin film（x=0.2）, the lowest leakage current was obtained and the minimum value reached 0.564 mA. Meanwhile, the highest threshold voltage and nonlinear coefficient were 81 V/mm and 1.9, respectively. The dielectric constant increased when the doping content of Ni reached a certain level. Besides, the dielectric loss was decreased firstly, and then increased.

关 键 词：钛酸铜钙 溶胶-凝胶法 电性能 显微组织 

分 类 号：TQ174[化学工程—陶瓷工业]