Temperature dependence of the point defect properties of GaN thin films studied by terahertz time-domain spectroscopy  

作　　者：FANG HeNan ZHANG Rong LIU Bin LI YeCao FU DeYi LI Yi XIE ZiLi ZHUANG Zhe ZHENG YouDou WU JingBo JIN BiaoBing CHEN Jian WU PeiHeng 

机构地区：[1]Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials,School of Electronics Science and Engineering,Nanjing National Laboratory of Microstructure,Nanjing University [2]Research Institute of Superconductor Electronics,School of Electronic Science and Engineering,Nanjing National Laboratory ofMicrostructure,Nanjing University

出　　处：《Science China(Physics,Mechanics & Astronomy)》2013年第11期2059-2064,共6页中国科学：物理学、力学、天文学（英文版）

基　　金：supported by the Special Funds for Major State Basic Research Project (Grant No. 2011CB301900);the 973 project of the Ministry of Science and Technology of China (Grant No. 2011CBA00107);the Hi-tech Research Project (Grant No. 2011AA03A103);the National Natural Science Foundation of China (Grant Nos. 60990311, 60820106003, 60906025, 60936004, 61176063, 61071009, and 61027008);the Specialized Research Fund for the Doctoral Program of Higher Education (Grant No. 20090091110040);the Natural Science of Foundation of Jiangsu province (Grant Nos. BK2011010, BK2010385, and BK2010178);the Fok Ying-Tong Education Foundation (Grant No. 122028)

摘　　要：The dielectric functions of GaN for the temperature and frequency ranges of 10–300 K and 0.3–1 THz are obtained using terahertz time-domain spectroscopy.It is found that there are oscillations of the dielectric functions at various temperatures.Physically,the oscillation behavior is attributed to the resonance states of the point defects in the material.Furthermore,the dielectric functions are well fitted by the combination of the simple Drude model together with the classical damped oscillator model.According to the values of the fitting parameters,the concentration and electron lifetime of the point defects for various temperatures are determined,and the temperature dependences of them are in accordance with the previously reported result.Therefore,terahertz time-domain spectroscopy can be considered as a promising technique for investigating the relevant characteristics of the point defects in semiconductor materials.The dielectric functions of GaN for the temperature and frequency ranges of 10–300 K and 0.3–1 THz are obtained using terahertz time-domain spectroscopy. It is found that there are oscillations of the dielectric functions at various temperatures.Physically, the oscillation behavior is attributed to the resonance states of the point defects in the material. Furthermore, the dielectric functions are well fitted by the combination of the simple Drude model together with the classical damped oscillator model. According to the values of the fitting parameters, the concentration and electron lifetime of the point defects for various temperatures are determined, and the temperature dependences of them are in accordance with the previously reported result.Therefore, terahertz time-domain spectroscopy can be considered as a promising technique for investigating the relevant characteristics of the point defects in semiconductor materials.

关 键 词：THz time-domain spectroscopy GaN film temperature dependence 

分 类 号：O484[理学—固体物理]