Photoemission properties of GaAs （100） β2（2×4） and GaAs （100） （4×2） reconstruction phases  

作　　者：鱼晓华 葛仲浩 常本康 

机构地区：[1]Institute of Electronic Engineering and Opto-Electric Technology, Nanjing University of Science and Technology, Nanjing 210094, China

出　　处：《Chinese Optics Letters》2013年第14期84-87,共4页中国光学快报（英文版）

基　　金：This work was supported by the National Science Foundation of China under Grant No. 61171042.

摘　　要：Using the first-principles plane-wave pseudopotential method, based on the density function theory, the electron structure and optical properties of GaAs （100） β2（2×4） and GaAs （100） （4×2） reconstructions are calculated. The formation energy of As-richβ2 （2 ×4） reconstruction is minus and the formation energy of Ga-rich （4×2） reconstruction is positive; As-rich β2（2×4） reconstruction is stable and Ga-rich （4×2） reconstruction is unstable. Ga-rich （4×2） reconstruction owns lower work function. The electrons at two reconstructions both move into the bulk and form a band-binding region. Both the absorption and the refleetivity of As-rich β2（2×4） reconstruction are smaller than the Ga-rich （4× 2） reconstruction. As- rich β2（2×4） reconstruction is more benefit for the movement of photos through the surface to emit photoelectrons.Using the first-principles plane-wave pseudopotential method, based on the density function theory, the electron structure and optical properties of GaAs （100） β2（2×4） and GaAs （100） （4×2） reconstructions are calculated. The formation energy of As-richβ2 （2 ×4） reconstruction is minus and the formation energy of Ga-rich （4×2） reconstruction is positive; As-rich β2（2×4） reconstruction is stable and Ga-rich （4×2） reconstruction is unstable. Ga-rich （4×2） reconstruction owns lower work function. The electrons at two reconstructions both move into the bulk and form a band-binding region. Both the absorption and the refleetivity of As-rich β2（2×4） reconstruction are smaller than the Ga-rich （4× 2） reconstruction. As- rich β2（2×4） reconstruction is more benefit for the movement of photos through the surface to emit photoelectrons.

分 类 号：TN304.23[电子电信—物理电子学] TN873.91