红外光激励下稀土共掺杂SrS中的光存储  

Optical Storage in Rare earth Doped SrS Under Infrared Stimulation

作　　者：孟宪国[1] 何志毅[1] 孙力[1] 王永生[1] 

机构地区：[1]北方交通大学光电子技术研究所,北京100044

出　　处：《激光与红外》2000年第6期367-369,共3页Laser & Infrared

基　　金：国家自然科学基金!(批准号 :198740 0 1)资助项目;北方交通大学论文基金

摘　　要：研究了 Sr S∶ Eu,Sm,Ce在紫外和蓝光辐照下的光激励发光 ,分析了不同写入光激发下光激励发射谱的差异 ,发现空穴束缚对其起决定性的作用。对电子发生转移的途径和光激励过程中电子的释放过程以及基质中不同稀土离子的作用进行了探讨。与双掺杂的 Sr S∶Eu,Sm及 Sr S∶Ce,Sm相比 ,Sr S∶ Eu,Sm,Ce的存储密度有进一步的提高。The infrared photo stimulated luminescence(PSL) of SrS∶Eu,Ce,Sm was investigated. The difference of PSL under different excitation was found. The holes play an important role in electron trapping. We have studied the electron transfer path in written process and the mechanism for PSL. Comparing with the doubly doped SrS∶Eu,Sm and SrS∶Ce,Sm,the storage density of SrS∶Eu,Sm, Ce was found to increase.

关 键 词：光存储 红外激励发光 稀土离子 掺杂 SRS 

分 类 号：TB381[一般工业技术—材料科学与工程] TP333.404[自动化与计算机技术—计算机系统结构]