退火温度对LaNiO3薄膜组织结构及电阻率的影响  

Effect of Annealing Temperature on Structure and Resistivity of LaNiO_3 Film

作　　者：冯治棋[1] 戴培华[2] 席博[2] 

机构地区：[1]兰州理工大学材料学院,兰州730050 [2]兰州理工大学甘肃省有色金属新材料省部共建国家重点实验室,兰州730050

出　　处：《有色金属（冶炼部分）》2013年第11期46-49,共4页Nonferrous Metals（Extractive Metallurgy)

基　　金：国家自然科学基金资助项目(21063008)

摘　　要：采用射频磁控溅射法在Si(111)上制备出LaNiO3薄膜,并通过XRD、SEM等进行表征。结果表眀,LaNiO3薄膜在未退火状态下出现一定的择优取向,在空气中随着退火温度的增加,结晶性更好,出现钙钛矿型结构;900℃退火时出现杂相,LaNiO3发生分解导致薄膜表面形貌发生巨大变化。电阻率与结构中的氧空位有密切联系,退火温度增加,氧空位减少,电阻率减小。在700℃退火时可以得到1.59Ω·cm的最小电阻率。LaNiO3 thin films were prepared on Si（111） with radio frequency magnetron sputtering （RFMS） method and characterized by XRD and SEM. The results show that a certain degree of preferred orientation appears in LaNiOa film under unannealed state. The higher the annealing temperature in air is, the better the film＇s crystallinity is, and perovskite type structure occurs. When the annealing temperature reaches 900 ℃, a hetero phase occurs, and the surface morphology changes dramatically due to decomposition of LaNiOa. The resistivity is closely linked with oxygen vacancies in the structure. The higher the annealing temperature is, the less the oxygen vacancies and the resistivity are. The minimum resistivity of 1.59 Ω · cm is obtained in film when annealed at 700 ℃.

关 键 词：LANIO3 薄膜 退火温度 显微组织 电阻率 

分 类 号：TB34[一般工业技术—材料科学与工程]