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机构地区:[1]浙江工业大学机械工程学院,浙江杭州310032
出 处:《浙江工业大学学报》2013年第5期505-509,共5页Journal of Zhejiang University of Technology
基 金:国家自然科学基金资助项目(10210516;51275471);浙江省自然科学基金资助项目(Y6100425;Y1100108);浙江省教育厅基金资助项目(Y201018497)
摘 要:将一种铁性薄膜层状沉积在另一种铁性基底上从而实现磁电性能的复合材料称为准2-2型多铁性复合材料.基于朗道热力学理论,研究了锆钛酸铅铁电薄膜Pb(Zr0.2Ti0.8)O3(PZT)平面应变对薄膜铁电性能的影响.引入与薄膜厚度参量相关的应变松弛理论,给出了薄膜厚度与薄膜面内错配应变的变化关系.最后结合铁磁基底La0.7Sr0.3MnO3(LSMO)与外磁场大小相关的非线性压磁系数,分别讨论了铁电薄膜厚度和外加磁场强度对准2-2型PZT-LSMO复合材料磁电性能的影响.研究结果表明:该构型复合材料具有高达1.8V/cm·Oe的纵向磁电电压系数,有望应用于新型电子器件.Quasi-2-2 multiferroic film-bulk heterostructure is a kind of laminate magnetoelectric composite that depositting one ferroic thin film on another ferroie bulk material. Using the Landau thermodynamic theory, the dependence of in-plane misfit strain of Pb (Zr0.2 Ti0.8 ) 03 (PZT) thin film on the ferroelectric properties was studied theoretically. The relationship between in-plane misfit strain and film thickness was given by introducing the thickness dependent misfit strain relaxation theory. Finally, combining with the magnetic field dependent nonlinear piezomagnetic coefficients of ferromagnetic substrate I.a0.7 Sr0.3 MnO3 (LSMO), the influence of film thickness and magnetic field intensity on the PZT-LSMO magnetoelectric property were discussed. For PZT thin films deposited on LSMO, the calculations yield a high ME voltage coefficient 1. 8 V/(cm · Oe), which makes the composite suitable for promising applications in the field new electronic devices.
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