Influence of a drain field plate on the forward blocking characteristics of an AlGaN/GaN high electron mobility transistor  

作　　者：赵胜雷 陈伟伟 岳童 王毅 罗俊 毛维 马晓华 郝跃 

机构地区：[1]Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University [2]School of Technical Physics, Xidian University

出　　处：《Chinese Physics B》2013年第11期528-531,共4页中国物理B（英文版）

基　　金：Project supported by the Program for New Century Excellent Talents in University,China(Grant No.NCET-12-0915);the National Natural Science Foundation of China(Grant No.61204085)

摘　　要：In this paper, the influence of a drain field plate （FP） on the forward blocking characteristics of an AlGaN/GaN high electron mobility transistor （HEMT） is investigated. The HEMT with only a gate FP is optimized, and breakdown voltage VBR is saturated at 1085 V for gate–drain spacing LGD ≥ 8 μm. On the basis of the HEMT with a gate FP, a drain FP is added with LGD=10 μm. For the length of the drain FP LDF ≤ 2 μm, VBR is almost kept at 1085 V, showing no degradation. When LDF exceeds 2 μm, VBR decreases obviously as LDF increases. Moreover, the larger the LDF, the larger the decrease of VBR. It is concluded that the distance between the gate edge and the drain FP edge should be larger than a certain value to prevent the drain FP from affecting the forward blocking voltage and the value should be equal to the LGD at which VBR begins to saturate in the first structure. The electric field and potential distribution are simulated and analyzed to account for the decrease of VBR.In this paper, the influence of a drain field plate （FP） on the forward blocking characteristics of an AlGaN/GaN high electron mobility transistor （HEMT） is investigated. The HEMT with only a gate FP is optimized, and breakdown voltage VBR is saturated at 1085 V for gate–drain spacing LGD ≥ 8 μm. On the basis of the HEMT with a gate FP, a drain FP is added with LGD=10 μm. For the length of the drain FP LDF ≤ 2 μm, VBR is almost kept at 1085 V, showing no degradation. When LDF exceeds 2 μm, VBR decreases obviously as LDF increases. Moreover, the larger the LDF, the larger the decrease of VBR. It is concluded that the distance between the gate edge and the drain FP edge should be larger than a certain value to prevent the drain FP from affecting the forward blocking voltage and the value should be equal to the LGD at which VBR begins to saturate in the first structure. The electric field and potential distribution are simulated and analyzed to account for the decrease of VBR.

关 键 词：AIGaN/GaN high electron mobility transistor forward blocking voltage drain field plate 

分 类 号：TN32[电子电信—物理电子学] TN304.23