Low voltage program-erasable Pd-Al_2O_3-Si capacitors with Ru nanocrystals for nonvolatile memory application  

作　　者：蓝澜 苟鸿雁 丁士进 张卫 

机构地区：[1]State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University

出　　处：《Chinese Physics B》2013年第11期532-535,共4页中国物理B（英文版）

基　　金：Project supported by the National Key Technology Research and Development Program of China(Grant No.2009ZX02302-002);the National Natural Science Foundation of China(Grant No.61274088);the Program for New Century Excellent Talents in University of Ministry of Education of China(Grant No.NCET-08-0127)

摘　　要：Pd-Al2O3-Si capacitors with Ru nanocrystals are fabricated and electrically characterized for nonvolatile memory application. While keeping the entire insulator Al2O3 thickness fixed, the memory window has a strong dependence on the tunneling layer thickness under low operating voltages, whereas it has weak dependence under high operating voltages. As for the optimal configuration comprised of 6-nm tunneling layer and 22-nm blocking layer, the resulting memory window increases from 1.5 V to 5.3 V with bias pulse increasing from 10-5 s to 10-2 s under ±7 V. A ten-year memory window as large as 5.2 V is extrapolated at room temperature after ±8 V/1 ms programming/erasing pulses.Pd-Al2O3-Si capacitors with Ru nanocrystals are fabricated and electrically characterized for nonvolatile memory application. While keeping the entire insulator Al2O3 thickness fixed, the memory window has a strong dependence on the tunneling layer thickness under low operating voltages, whereas it has weak dependence under high operating voltages. As for the optimal configuration comprised of 6-nm tunneling layer and 22-nm blocking layer, the resulting memory window increases from 1.5 V to 5.3 V with bias pulse increasing from 10-5 s to 10-2 s under ±7 V. A ten-year memory window as large as 5.2 V is extrapolated at room temperature after ±8 V/1 ms programming/erasing pulses.

关 键 词：metal-oxide-semiconductor capacitors nonvolatile memory Ru nanocrystals atomic-layer-deposition 

分 类 号：TP333[自动化与计算机技术—计算机系统结构] TB383[自动化与计算机技术—计算机科学与技术]