Temperature-dependent dielectric properties of Au/Si_3N_4/n-Si (metal insulator semiconductor) structures  

Temperature-dependent dielectric properties of Au/Si_3N_4/n-Si(metal insulator semiconductor) structures

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作  者:T.Ataseven A.Tataroglu 

机构地区:[1]Physics Department, Faculty of Sciences, Gazi University, Teknikokullar

出  处:《Chinese Physics B》2013年第11期541-546,共6页中国物理B(英文版)

基  金:Projected supported by Gazi University Scientific Research Project(BAP),FEF.05/2012-15

摘  要:The dielectric properties of Au/Si3N4/n-Si (MIS) structures are studied using the admittance measurements (C–V and G/ω–V) each as a function of temperature in a range from 80 K to 400 K for two frequencies (100 kHz and 1 MHz). Experimental results show that both the dielectric constant (ε’) and the dielectric loss (ε") increase with temperature increasing and decrease with frequency increasing. The measurements also show that the ac conductivity (σac) increases with temperature and frequency increasing. The lnσac versus 1000/T plot shows two linear regions with different slopes which correspond to low (120 K–240 K) and high (280 K–400 K) temperature ranges for the two frequencies. It is found that activation energy increases with frequency and temperature increasing.The dielectric properties of Au/Si3N4/n-Si (MIS) structures are studied using the admittance measurements (C–V and G/ω–V) each as a function of temperature in a range from 80 K to 400 K for two frequencies (100 kHz and 1 MHz). Experimental results show that both the dielectric constant (ε’) and the dielectric loss (ε") increase with temperature increasing and decrease with frequency increasing. The measurements also show that the ac conductivity (σac) increases with temperature and frequency increasing. The lnσac versus 1000/T plot shows two linear regions with different slopes which correspond to low (120 K–240 K) and high (280 K–400 K) temperature ranges for the two frequencies. It is found that activation energy increases with frequency and temperature increasing.

关 键 词:Au/Si3N4/n-Si (metal-insulator-semiconductor) structure admittance measurements dielectricproperties ac conductivity 

分 类 号:TN304[电子电信—物理电子学]

 

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