Degradation behaviors of high power GaN-based blue light emitting diodes  

作　　者：钟灿涛 于彤军 颜建 陈志忠 张国义 

机构地区：[1]State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University

出　　处：《Chinese Physics B》2013年第11期603-606,共4页中国物理B（英文版）

基　　金：Project supported by the National Basic Research Program of China(Grant Nos.2011CB301905 and 2013CB328705);the National High Technology Research and Development Program of China(Grant No.2009AA03A198);the National Natural Science Foundation of China(Grant Nos.61076012 and 61376012)

摘　　要：The degradation mechanism of high power InGaN/GaN blue light emitting diodes （LEDs） is investigated in this paper. The LED samples were stressed at room temperature under 350-mA injection current for about 400 h. The light output power of the LEDs decreased by 35% during the first 100 h and then remained almost unchanged, and the reverse current at-5 V increased from 10^-9 A to 10^-7 A during the aging process. The power law, whose meaning was re-illustrated by the improved rate equation, was used to analyze the light output power-injection current （L-I） curves. The analysis results indicate that nonradiative recombination, Auger recombination, and the third-order term of carriers overflow increase during the aging process, all of which may be important reasons for the degradation of LEDs. Besides, simulating L-I curves with the improved rate equation reveal that higher-than-third-order terms of carriers overflow may not be the main degradation mechanism, because they change slightly when the LED is stressed.The degradation mechanism of high power InGaN/GaN blue light emitting diodes （LEDs） is investigated in this paper. The LED samples were stressed at room temperature under 350-mA injection current for about 400 h. The light output power of the LEDs decreased by 35% during the first 100 h and then remained almost unchanged, and the reverse current at-5 V increased from 10^-9 A to 10^-7 A during the aging process. The power law, whose meaning was re-illustrated by the improved rate equation, was used to analyze the light output power-injection current （L-I） curves. The analysis results indicate that nonradiative recombination, Auger recombination, and the third-order term of carriers overflow increase during the aging process, all of which may be important reasons for the degradation of LEDs. Besides, simulating L-I curves with the improved rate equation reveal that higher-than-third-order terms of carriers overflow may not be the main degradation mechanism, because they change slightly when the LED is stressed.

关 键 词：light emitting diodes DEGRADATION rate equation 

分 类 号：TN312.8[电子电信—物理电子学]