High-voltage SOI lateral MOSFET with a dual vertical field plate  

作　　者：范杰 张波 罗小蓉 李肇基 

机构地区：[1]State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China

出　　处：《Chinese Physics B》2013年第11期645-650,共6页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant No.61176069);the Program for New Century Excellent Talents in University of Ministry of Education of China(Grant No.NCET-11-0062);Project of 51308020304

摘　　要：A new silicon-on-insulator （SOI） power lateral MOSFET with a dual vertical field plate （VFP） in the oxide trench is proposed. The dual VFP modulates the distribution of the electric field in the drift region, which enhances the internal field of the drift region and increases the drift doping concentration of the drift region, resulting in remarkable improvements in breakdown voltage （BV） and specific on-resistance （Ron,sp）. The mechanism of the VFP is analyzed and the characteristics of BV and Ron,sp are discussed. It is shown that the BV of the proposed device increases from 389 V of the conventional device to 589 V, and the Ron,sp decreases from 366 mΩ·cm2 to 110 mΩ·cm2.A new silicon-on-insulator （SOI） power lateral MOSFET with a dual vertical field plate （VFP） in the oxide trench is proposed. The dual VFP modulates the distribution of the electric field in the drift region, which enhances the internal field of the drift region and increases the drift doping concentration of the drift region, resulting in remarkable improvements in breakdown voltage （BV） and specific on-resistance （Ron,sp）. The mechanism of the VFP is analyzed and the characteristics of BV and Ron,sp are discussed. It is shown that the BV of the proposed device increases from 389 V of the conventional device to 589 V, and the Ron,sp decreases from 366 mΩ·cm2 to 110 mΩ·cm2.

关 键 词：breakdown voltage specific on-resistance vertical field plate oxide trench 

分 类 号：TN386.1[电子电信—物理电子学] TN405