Effects of annealing rate and morphology of sol–gel derived ZnO on the performance of inverted polymer solar cells  

作　　者：余璇 胡子阳 黄振华 于晓明 张建军 赵庚申 赵颖 

机构地区：[1]Institute of Photo-electronic Thin Film Devices and Technology of Nankai University, Key Laboratory of Photo-electronic Thin Film Devices and Technology of Tianjin, Key Laboratory of Opto-electronic Information Science and Technology for Ministry of Education

出　　处：《Chinese Physics B》2013年第11期664-668,共5页中国物理B（英文版）

基　　金：Project supported by the National Basic Research Program of China(Grant Nos.2011CBA00705,2011CBA00706,and 2011CBA00707);the National Natural Science Foundation of China(Grant No.61377031)

摘　　要：The effects of annealing rate and morphology of sol–gel derived zinc oxide （ZnO） thin films on the performance of inverted polymer solar cells （IPSCs） are investigated. ZnO films with different morphologies are prepared at different annealing rates and used as the electron transport layers in IPSCs. The undulating morphologies of ZnO films fabricated at annealing rates of 10 ℃/min and 3 ℃/min each possess a rougher surface than that of the ZnO film fabricated at a fast annealing rate of 50 ℃/min. The ZnO films are characterized by atomic force microscopy （AFM）, optical transmittance measurements, and simulation. The results indicate that the ZnO film formed at 3 ℃/min possesses a good-quality contact area with the active layer. Combined with a moderate light-scattering, the resulting device shows a 16% improvement in power conversion efficiency compared with that of the rapidly annealed ZnO film device.The effects of annealing rate and morphology of sol–gel derived zinc oxide （ZnO） thin films on the performance of inverted polymer solar cells （IPSCs） are investigated. ZnO films with different morphologies are prepared at different annealing rates and used as the electron transport layers in IPSCs. The undulating morphologies of ZnO films fabricated at annealing rates of 10 ℃/min and 3 ℃/min each possess a rougher surface than that of the ZnO film fabricated at a fast annealing rate of 50 ℃/min. The ZnO films are characterized by atomic force microscopy （AFM）, optical transmittance measurements, and simulation. The results indicate that the ZnO film formed at 3 ℃/min possesses a good-quality contact area with the active layer. Combined with a moderate light-scattering, the resulting device shows a 16% improvement in power conversion efficiency compared with that of the rapidly annealed ZnO film device.

关 键 词：polymer solar cells zinc oxide thin film MORPHOLOGY ANNEALING 

分 类 号：TM914.4[电气工程—电力电子与电力传动]