荷控忆阻器等效电路分析模型及其电路特性研究  

Equivalent circuit analysis model of charge-controlled memristor and its circuit characteristics

作　　者：胡丰伟[1] 包伯成[1] 武花干[2] 王春丽[1] 

机构地区：[1]常州大学信息科学与工程学院,常州213164 [2]南京理工大学电子工程系,南京210094

出　　处：《物理学报》2013年第21期396-403,共8页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:51277017);江苏省自然科学基金(批准号:BK2012583)资助的课题~~

摘　　要：忆阻器是物理上新实现的具有记忆特性的基本二端电路元件.根据-q关系式的泰勒级数形式构建了荷控忆阻器等效电路分析模型,以三次非线性荷控忆阻器模型为例,对不同参数条件下的荷控忆阻器进行了伏安关系、有无源性等电路特性的理论分析.结果表明:荷控忆阻器的伏安关系具有斜体"8"字形紧磁滞回线特性,随其参数符号的不同,荷控忆阻器呈现出无源性和有源性,导致其电路特性发生相应的变化;相比无源荷控忆阻器,有源荷控忆阻器更适用于作为二次谐波信号产生电路使用.制作了荷控忆阻器特性分析等效电路的实验电路,实验测量结果很好地验证了理论分析结果.Memristor realized physically is recently a basic two-terminal circuit element with memory property. Based on Taylor series form of ~ - q relationship, a charge-controlled memristor equivalent circuit analysis model is built. A charge-controlled memristor model with cubic nonlinearity is taken, as an example, to make a theoretical analysis of circuit characteristics, such as voltage-current relationship, active-passive property, and so on, of the charge-controlled memristor with different parameters. Results indicate that the voltage-current relationship of the charge-controlled memristor has an italic ＂8＂ shaped hysteresis loop characteristic, and the charge- controlled memristor shows passivity and activity accompanied with the variations of parameter symbols, resulting in the occurrence of the corresponding variations of circuit characteristics; compared with the passive memristor, the active memristor is more suitable for use as a second harmonic signal generation circuit. An experiment circuit is built based on the equivalent circuit of the charge- controlled memristor characteristic analysis, and the experimental results well verify the theoretical analysis.

关 键 词：荷控忆阻器 等效电路 伏安关系 电路特性 

分 类 号：TM13[电气工程—电工理论与新技术]