Light-extraction enhancement of freestanding GaN-based flip-chip light-emitting diodes using two-step roughening methods  

作　　者：安铁雷 孙波 魏同波 赵丽霞 段瑞飞 廖元勋 李晋闽 伊福廷 

机构地区：[1]Institute of Semiconductors, Chinese Academy of Sciences [2]Institute of High Energy Physics, Chinese Academy of Sciences

出　　处：《Journal of Semiconductors》2013年第11期49-52,共4页半导体学报（英文版）

基　　金：supported by the National Natural Science Foundation of China(Nos.61274040,61274008);the National Basic Research Program of China(No.2011CB301902);the National High Technology Program of China(No.2011AA03A103)

摘　　要：The light extraction enhancement of freestanding GaN-based flip-chip light-emitting diodes （FS- FCLEDs） using two-step roughening methods is investigated. The output power of LEDs fabricated by using one-step and two-step roughening methods are compared. The results indicate that two-step roughening meth- ods show more potential for light extraction. Compared with flat FS-FCLEDs, the output power of FS-FCLEDs with a nanotextured hemisphere surface shows an enhancement of 90.7%.The light extraction enhancement of freestanding GaN-based flip-chip light-emitting diodes （FS- FCLEDs） using two-step roughening methods is investigated. The output power of LEDs fabricated by using one-step and two-step roughening methods are compared. The results indicate that two-step roughening meth- ods show more potential for light extraction. Compared with flat FS-FCLEDs, the output power of FS-FCLEDs with a nanotextured hemisphere surface shows an enhancement of 90.7%.

关 键 词：freestanding GaN flip chip LED CSCI wet etching light extraction 

分 类 号：TN312.8[电子电信—物理电子学] TN405