Effect of low temperature annealing on the electrical properties of an MOS capacitor with a HfO_2 dielectric and a TiN metal gate  

作　　者：韩锴 马雪丽 项金娟 杨红 王文武 

机构地区：[1]Department of Physics and Electronic Science, Weifang University [2]Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences

出　　处：《Journal of Semiconductors》2013年第11期53-56,共4页半导体学报（英文版）

基　　金：supported by the Important National Science&Technology Specific Projects,China(No.2009ZX02035);the National Natural Science Foundation of China(Nos.61176091,50932001)

摘　　要：Abstract： The effects of low temperature annealing, such as post high-k dielectric deposition annealing （PDA）, post metal annealing （PMA） and forming gas annealing （FGA） on the electrical characteristics of a metal-oxidesemiconductor （MOS） capacitor with a TiN metal gate and a Hf02 dielectric are systematically investigated. It can be found that the low temperature annealing can improve the capacitance-voltage hysteresis performance signifi- cantly at the cost of increasing gate leakage current. Moreover, FGA could effectively decrease the interfacial state density and oxygen vacancy density, and PDA could make the flat band positively shift which is suitable for P-type MOSs. Key words： ALD Hf02; TiN; low temperature annealing; hysteresisAbstract： The effects of low temperature annealing, such as post high-k dielectric deposition annealing （PDA）, post metal annealing （PMA） and forming gas annealing （FGA） on the electrical characteristics of a metal-oxidesemiconductor （MOS） capacitor with a TiN metal gate and a Hf02 dielectric are systematically investigated. It can be found that the low temperature annealing can improve the capacitance-voltage hysteresis performance signifi- cantly at the cost of increasing gate leakage current. Moreover, FGA could effectively decrease the interfacial state density and oxygen vacancy density, and PDA could make the flat band positively shift which is suitable for P-type MOSs. Key words： ALD Hf02; TiN; low temperature annealing; hysteresis

关 键 词：ALD HfO2 TIN low temperature annealing HYSTERESIS 

分 类 号：TM53[电气工程—电器]