High power single mode 980 nm AlGaInAs/AlGaAs quantum well lasers with a very low threshold current  

作　　者：董振 王翠鸾 井红旗 刘素平 马骁宇 

机构地区：[1]National Engineering Research Center for Optoelectronic Devices, Institute of Semiconductors, Chinese Academy of Sciences

出　　处：《Journal of Semiconductors》2013年第11期70-73,共4页半导体学报（英文版）

基　　金：supported by the National Military Electronic Component Program of China(No.1107XG0700)

摘　　要：To achieve low threshold current as well as high single mode output power, a graded index separate confinement heterostructure （GRIN-SCH） A1GaInAs/A1GaAs quantum well laser with an optimized ridge wave- guide was fabricated. The threshold current was reduced to 8 mA. An output power of 76 mW was achieved at 100 mA current at room temperature, with a slope efficiency of 0.83 W/A and a horizon divergent angle of 6.3°. The maximum single mode output power of the device reached as high as 450 mW.To achieve low threshold current as well as high single mode output power, a graded index separate confinement heterostructure （GRIN-SCH） A1GaInAs/A1GaAs quantum well laser with an optimized ridge wave- guide was fabricated. The threshold current was reduced to 8 mA. An output power of 76 mW was achieved at 100 mA current at room temperature, with a slope efficiency of 0.83 W/A and a horizon divergent angle of 6.3°. The maximum single mode output power of the device reached as high as 450 mW.

关 键 词：semiconductor laser low threshold ridge waveguide single mode 

分 类 号：TN248[电子电信—物理电子学]