A feasibility study on SiC optoinjected CCD with buried channels  

作　　者：叶娜 陈治明 谢龙飞 

机构地区：[1]Electronic Engineering Department, Xi’an University of Technology

出　　处：《Journal of Semiconductors》2013年第11期83-87,共5页半导体学报（英文版）

摘　　要：An SiC optoinjected charge-coupled device with buried channels （BCCD） is designed for the detection of ultraviolet light （UV）, and its feasibility is studied by means of Silvaco numerical simulation software. Charge storage and transfer characteristics of the BCCD can be conformed by simulation results. The buried channel design is a key point to realize the high sensitivity of the device. The channel mobility of electrons in the 6H-SiC BCCD can be changed from 47 to 200 cm2/（V.s） when the channel is replaced from surface to the subsurface of 0.2 um. With the optimized device parameters, the density of stored electrons can reach up to 1.062 ×10^11 cm^-2 and the number of stored electrons is up to 1.826 × 10^8 for UV light with wavelengths from 200 to 380 nm and an intensity of 0.1 W/cm2 under a driving voltage of 15 V at room temperature.An SiC optoinjected charge-coupled device with buried channels （BCCD） is designed for the detection of ultraviolet light （UV）, and its feasibility is studied by means of Silvaco numerical simulation software. Charge storage and transfer characteristics of the BCCD can be conformed by simulation results. The buried channel design is a key point to realize the high sensitivity of the device. The channel mobility of electrons in the 6H-SiC BCCD can be changed from 47 to 200 cm2/（V.s） when the channel is replaced from surface to the subsurface of 0.2 um. With the optimized device parameters, the density of stored electrons can reach up to 1.062 ×10^11 cm^-2 and the number of stored electrons is up to 1.826 × 10^8 for UV light with wavelengths from 200 to 380 nm and an intensity of 0.1 W/cm2 under a driving voltage of 15 V at room temperature.

关 键 词：6H-SIC BCCD ultraviolet light MOBILITY channel 

分 类 号：TN386.5[电子电信—物理电子学]