邻苯三酚红修饰碳糊电极吸附伏安法测定痕量铋  

Determination of Trace Bismuth by Adsorptive Stripping Voltammetry with Pyrogallol Red Modified Carbon Paste Electrode

作　　者：郭会时[1] 李益恒[2] 

机构地区：[1]韶关大学化学系,韶关512005 [2]湘潭大学化学系,湘潭411105

出　　处：《分析化学》2000年第12期1527-1530,共4页Chinese Journal of Analytical Chemistry

基　　金：湖南省教委科学基金资助项目。

摘　　要：报道了采用邻苯二酚红修饰碳糊电极测定痕量铋的方法。在 ０．３０ｍｏｌ／Ｌ的 ＨＣＩ溶液中，于－０．１０ Ｖ搅拌富集 ３ ｍｉｎ，然后在－ ０．３５ Ｖ静止还原 ６０ ｓ，再进行阳极化扫描，在－ ０． １０ Ｖ左右获得灵敏的铋溶出峰，二次导数峰电流与铋浓度在 １．０ × １０－９～ ６．０ × １０－７ｍｏｌ／Ｌ范围内呈线性关系，检出限为 ５ × １０－１０ｍｏｌ／Ｌ。对电极反应机理进行了讨论。A pyrogallol red modified carbon paste electrode was used for the selective accumulation of bismuth(Ⅲ). In 0.30 mol/L HCI solution, by means of accumulating for 3 min at - 0. 10 V(vs. SCE), then reducing for 60 s at - 0.35 V, and finally scanning from - 0.35 V to 0. 15 V, a sensitive stripping peak of bismuth(Ⅲ) is obtained at about - 0. 1 V. The second-order derivative peak height is directly proportional to the concentration of bismuth(Ⅲ) over the range ban 1 .0 x 10-9 mol/L to 6.0 x 10-7mol/L. The detection limit for bismuth(Ⅲ) is as low as 5 x 10-10 mol/L. The mechanism of electrode reaction was also discussed.

关 键 词：铋 碳糊修饰电极 吸附伏安法 药物分析 PR 

分 类 号：O657.1[理学—分析化学]