周期性磁场下的GaAs/Al_(x)Ga_(1-x)As单量子阱中电子的能带结构  

Electronic Band Structure of GaAs/Al_(x)Ga_(1-x)As Single Quantum Well in Periodic Magnetic Field

作　　者：廖任远[1] 郑永梅[1] 王仁智[1] 李书平[1] 

机构地区：[1]厦门大学物理学系,福建厦门361005

出　　处：《厦门大学学报（自然科学版）》2000年第6期758-763,共6页Journal of Xiamen University：Natural Science

基　　金：福建省自然科学基金资助项目(E991005)

摘　　要：为了研究外磁场对量子阱中电子的能带结构的影响 ,采取了一种简单的可解析求解的模型 ,研究了周期性磁场下的 Ga As/ Alx Ga1 -x As单量子阱中电子的能带结构 ,发现在周期性磁场的作用下 ,在 z方向上的能量是分立的量子化能级 ,而原来在 x- y平面内连续的能级分裂成分立的一系列许可带 ,但是在 x方向上能量仍然是连续的 。In order to investigate the effect of an external magnetic field on electronic band structure of quantum wells, we employ a simple solvable model to investigate electronic band structure of GaAs/AlxGa1-x As single quantum well in a periodic magnetic field. Through careful study, we find that under the periodic magnetic field, the energies of z direction are certain quantum energy steps, and the energies of xy plane which are continuous originally are divided into various permissive bands, but the energies of x direction are still continuous. Meanwhile, the characteristics of electronic band structure and its formative mechanism are discussed.

关 键 词：周期性磁场 电子能带结构 有效质量理论 

分 类 号：O481.1[理学—固体物理]