低温沉积银和银铜薄膜的耐原子氧性能  

Atomic Oxygen Resistant Behavior of Ag and Ag-Cu Films Deposited at Low Temperature

作　　者：高晓明[1,2] 孙嘉奕[2] 胡明[2] 翁立军[2] 伏彦龙[2] 杨军[2] 谭洪根 张良俊 

机构地区：[1]上海市空间飞行器机构重点实验室,上海201108 [2]中国科学院兰州化学物理研究所固体润滑国家重点实验室,兰州730000

出　　处：《机械工程材料》2013年第11期55-59,63,共6页Materials For Mechanical Engineering

基　　金：国家自然科学基金资助项目(50301015;51227804)

摘　　要：采用多弧离子镀方法在低温(173K)下沉积了银和银铜薄膜,通过地面原子氧模拟试验系统考察了薄膜的耐原子氧性能,通过X射线衍射仪(XRD)和原子力显微镜(AFM)对薄膜的结构和耐原子氧性能进行了分析,并与室温下沉积的银薄膜进行了比较。结果表明:低温沉积和铜元素合金化,可减小银薄膜的晶粒尺寸,并提高其结构致密性;低温沉积的银铜薄膜表现出细密的结构,这有利于抑制原子氧对薄膜的氧化,从而使其比室温及低温下沉积的银薄膜具有更好的耐原子氧性能。Ag and Ag-Cu films were deposited at low temperature （173 K） by arc ion plating （AIP）. Atomic oxygen （AO） irradiation experiments were conducted using a ground AO simulation facility. The structure and AO resistant behavior of the films were investigated by X-ray diffraction （XRD） and atomic force microscope （AFM） and compared with Ag film deposited at room temperature. The results show that crystallite size of Ag film was reduced by low temperature deposition and alloying with Cu, and its structure became more densified. So the Ag-Cu film deposited at low temperature had a dense structure beneficial for resisting oxidation of films by oxygen, and exhibited much better AO resistant behavior than that of the Ag film deposited at room temperature or at low temperature after the AO irradiation.

关 键 词：低温沉积 银铜薄膜 耐原子氧性能 

分 类 号：TG146.3[一般工业技术—材料科学与工程]