基于全集成自提取结终端隔离BCD新工艺的场致发光高压驱动芯片  

HV-EL Drivers ICs on Novel HV-BCD Process Platform with Self-Extracted JTE Trench Termination

作　　者：黄伟[1] 胡南中[1] 李海鸥[1,2] 于宗光[1] 

机构地区：[1]中国电子科技集团公司第五十八研究所,江苏无锡214035 [2]桂林电子科技大学信息与通信学院,广西桂林541004

出　　处：《电子学报》2013年第9期1858-1862,共5页Acta Electronica Sinica

基　　金：国家自然科学基金(No.61274077);江苏省自然科学基金(No.BK2011173;No.BK20120094)

摘　　要：本文提出可集成自提取结终端的0135Lm 150V-BCD(双极-互补金属氧化物半导体-双重扩散金属氧化物半导体)全套新型高压工艺.利用此工艺研制出100V场致发光用高低侧驱动芯片,并提出了基于双极器件BC(双极集电极)结短路自提取结终端新工艺与新结构,既可满足场致发光高压驱动芯片应用,又能取代传统采用氧化扩散工艺的P-ISO(P型隔离结构)传统隔离结构,显著简化了工艺和提高了芯片的高集成度,确保片内集成的低电阻率VDNMOS/LDPMOS(N型垂直双扩散金属氧化物半导体场效应晶体管/P型横向扩散金属氧化物半导体场效应晶体管)高压驱动模块与低压逻辑控制模块在100V高压脉冲交替工作状况下无负电位、EMMI(微光显微镜)等寄生现象出现.A high voltage BCI）（Bipolar-CMOS-DMOS）technology by using self-extracted JTE（Junction Termination Exten- sion）lxench isolation based on 0.35gin standard CMOS（Complementary Metal Oxide Semiconductor）process has been developed for LCD（ Liquid Crystal Display） backlight application. In this technology, HV （ High Voltage） circuit block, including low cost VDN- MOS（ Vertical Double Diffused N-MOS ） and LDPMOS （ Laterally Diffused P-MOS ） with resurf principle, and LV （ Low Voltage） block are integrated together. Advanced deep trench isolation technology which has higher integration than conventional P-type isola- tion is firstly implemented to protect LV block from HV block and sustain the d v/dt, d i/dt effect with self-extracted function. The breakdown voltage is above 150V. Finally,it is shown that the performance of designed IC driver can satisfy the EL（Electrolumi- nescent Lamps）lamp application with frequency at least 400Hz of the switch signal and the power supply is about 100V.For the simplicity of the silicon technology, the cost is saved.

关 键 词：BCD(双极-互补金属氧化物半导体-双重扩散金属氧化物半导体) 场致发光 自提取结终端 高低 侧全桥驱动 

分 类 号：TN43[电子电信—微电子学与固体电子学]